AP4955GM-HF Todos los transistores

 

AP4955GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4955GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

AP4955GM-HF Datasheet (PDF)

 ..1. Size:94K  ape
ap4955gm-hf.pdf pdf_icon

AP4955GM-HF

AP4955GM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS -20VD2D1 Low Gate Charge RDS(ON) 45mD1 Fast Switching Characteristic ID -5.6AG2S2 RoHS Compliant & Halogen-FreeG1S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best comb

 6.1. Size:94K  ape
ap4955gm.pdf pdf_icon

AP4955GM-HF

AP4955GMRoHS-compliant ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS -20VD2D1 Low Gate Charge RDS(ON) 45mD1 Fast Switching Characteristic ID -5.6AG2S2G1S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedize

 9.1. Size:182K  ape
ap4951gm.pdf pdf_icon

AP4955GM-HF

AP4951GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD2D2D1 Low Gate Charge RDS(ON) 96mD1 Fast Switching Performance ID -3.4AG2S2G1S1SO-8DescriptionD2D1Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized d

 9.2. Size:95K  ape
ap4957agm-hf.pdf pdf_icon

AP4955GM-HF

AP4957AGM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 26mD1D1 Dual P MOSFET Package ID -7.4AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best com

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History: G11 | CEF05N6 | AUIRF7734M2 | AM2336N-T1 | DMP1096UCB4 | SMOS44N80

 

 
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