AP9575GM-HF Todos los transistores

 

AP9575GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9575GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SO8
 

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AP9575GM-HF Datasheet (PDF)

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ap9575gm-hf.pdf pdf_icon

AP9575GM-HF

AP9575GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60VDDD Simple Drive Requirement RDS(ON) 90mD Fast Switching Characteristic ID -4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

 6.1. Size:65K  ape
ap9575gm.pdf pdf_icon

AP9575GM-HF

AP9575GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60VDDD Simple Drive Requirement RDS(ON) 90mD Fast Switching Characteristic ID -4AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi

 7.1. Size:98K  ape
ap9575gh ap9575gj.pdf pdf_icon

AP9575GM-HF

AP9575GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15AGSDescriptionGDThe TO-252 package is widely preferred for commercial-industrial STO-252(H)surface mount applications and suited for low voltage appl

 7.2. Size:93K  ape
ap9575gi.pdf pdf_icon

AP9575GM-HF

AP9575GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AGDTO-220CFM(I)SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, l

Otros transistores... AP4955GM-HF , AP4957AGM-HF , AP50T03GH , AP50T03GJ , AP5523GM-HF , AP9575GH , AP9575GI , AP9575GJ , SPP20N60C3 , AP9576GM-HF , AP9577GI-HF , AP9578GI-HF , AP9578GJ , AP95T07GS-HF , AP95T10AGR-HF , AP9685GM-HF , AP96LT07GP-HF .

History: SIR470DP | APT60M80L2VFRG | QM3009K | RJK2017DPP | QM3009S | BSC072N03LDG | QM6008U

 

 
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