AP9576GM-HF Todos los transistores

 

AP9576GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9576GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SO8

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AP9576GM-HF datasheet

 ..1. Size:95K  ape
ap9576gm-hf.pdf pdf_icon

AP9576GM-HF

AP9576GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS -60V D D D Simple Drive Requirement RDS(ON) 90m D Fast Switching Characteristic ID -4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 6.1. Size:69K  ape
ap9576gm.pdf pdf_icon

AP9576GM-HF

AP9576GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS -60V D D Simple Drive Requirement D RDS(ON) 90m D Fast Switching Characteristic ID -4A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best

 7.1. Size:99K  ape
ap9576gh.pdf pdf_icon

AP9576GM-HF

AP9576GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID -14A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low volta

 9.1. Size:98K  ape
ap9575gh ap9575gj.pdf pdf_icon

AP9576GM-HF

AP9575GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suited for low voltage appl

Otros transistores... AP4957AGM-HF , AP50T03GH , AP50T03GJ , AP5523GM-HF , AP9575GH , AP9575GI , AP9575GJ , AP9575GM-HF , IRFP260 , AP9577GI-HF , AP9578GI-HF , AP9578GJ , AP95T07GS-HF , AP95T10AGR-HF , AP9685GM-HF , AP96LT07GP-HF , AP96T07AGP-HF .

 

 

 


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