AP9577GI-HF Todos los transistores

 

AP9577GI-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9577GI-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.064 Ohm

Encapsulados: TO220F

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AP9577GI-HF datasheet

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ap9577gi-hf.pdf pdf_icon

AP9577GI-HF

AP9577GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description AP9577 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

 6.1. Size:95K  ape
ap9577gi.pdf pdf_icon

AP9577GI-HF

AP9577GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17A G RoHS Compliant S Description AP9577 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resis

 9.1. Size:95K  ape
ap9576gm-hf.pdf pdf_icon

AP9577GI-HF

AP9576GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS -60V D D D Simple Drive Requirement RDS(ON) 90m D Fast Switching Characteristic ID -4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 9.2. Size:98K  ape
ap9575gh ap9575gj.pdf pdf_icon

AP9577GI-HF

AP9575GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suited for low voltage appl

Otros transistores... AP50T03GH , AP50T03GJ , AP5523GM-HF , AP9575GH , AP9575GI , AP9575GJ , AP9575GM-HF , AP9576GM-HF , 4435 , AP9578GI-HF , AP9578GJ , AP95T07GS-HF , AP95T10AGR-HF , AP9685GM-HF , AP96LT07GP-HF , AP96T07AGP-HF , AP98T03GP .

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History: AP9576GM-HF

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