AP9578GI-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9578GI-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET AP9578GI-HF

AP9578GI-HF Datasheet (PDF)

..1. Size:73K ape
ap9578gi-hf.pdf

AP9578GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -9AG Halogen Free & RoHS CompliantSDescriptionAP9578 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

7.1. Size:232K ape
ap9578gh.pdf

AP9578GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10AGSDescriptionAP9578 series are from Advanced Power innovated design andGDSsilicon process technology to achieve the lowest possible on-TO-252(H)

7.2. Size:200K ape
ap9578gs.pdf

AP9578GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-263(S)ruggedized device d

7.3. Size:196K ape
ap9578gp.pdf

AP9578GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10AGSDescriptionThe Advanced Power MOSFETs from APEC provide the designer withGDthe best combination of fast switching, ruggedized device design, low

7.4. Size:180K ape
ap9578gm.pdf

AP9578GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS -60VDDD Simple Drive Requirement RDS(ON) 170mD Fast Switching Characteristic ID -3AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, ruggedized device

7.5. Size:217K ape
ap9578gh ap9578gj.pdf

AP9578GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications and suited for low volt

7.6. Size:100K ape
ap9578gh j-hf.pdf

AP9578GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10AGSDescriptionThe TO-252 package is widely preferred for all commercial-industrial GDSsurface mount applications and suited for low voltage applica

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Liste

Recientemente añadidas las descripciónes de los transistores: