AP98T03GP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP98T03GP  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 156 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 200 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V

Qgⓘ - Carga de la puerta: 71 nC

trⓘ - Tiempo de subida: 78 nS

Cossⓘ - Capacitancia de salida: 1210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm

Encapsulados: TO220

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AP98T03GP datasheet

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AP98T03GP

AP98T03GP/S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- r

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 ap98t03gps-hf.pdf pdf_icon

AP98T03GP

AP98T03GP/S-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-

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 ap98t03gs.pdf pdf_icon

AP98T03GP

AP98T03GP/S-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description AP98T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance

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 ap98t03gw-hf.pdf pdf_icon

AP98T03GP

AP98T03GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Ultra-low On-resistance RDS(ON) 3m Fast Switching Characteristic ID 145A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg

MOSTRAR MÁS

Otros transistores... AP9577GI-HF, AP9578GI-HF, AP9578GJ, AP95T07GS-HF, AP95T10AGR-HF, AP9685GM-HF, AP96LT07GP-HF, AP96T07AGP-HF, IRFB3607, AP98T06GP-HF, AP60L02GJ, AP60T03AH, AP60T03AJ, AP60T03AS, AP60T03GJ, AP60T10GP-HF, AP60T10GS-HF