AP98T06GP-HF Todos los transistores

 

AP98T06GP-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP98T06GP-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 1120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO220
 

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AP98T06GP-HF datasheet

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AP98T06GP-HF

AP98T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 5.1. Size:93K  ape
ap98t06gp.pdf pdf_icon

AP98T06GP-HF

AP98T06GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistanc

 6.1. Size:165K  ape
ap98t06gs.pdf pdf_icon

AP98T06GP-HF

AP98T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description AP98T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

 6.2. Size:94K  ape
ap98t06gi-hf.pdf pdf_icon

AP98T06GP-HF

AP98T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 5m Fast Switching Characteristic ID 67A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rugge

Otros transistores... AP9578GI-HF , AP9578GJ , AP95T07GS-HF , AP95T10AGR-HF , AP9685GM-HF , AP96LT07GP-HF , AP96T07AGP-HF , AP98T03GP , IRFB3607 , AP60L02GJ , AP60T03AH , AP60T03AJ , AP60T03AS , AP60T03GJ , AP60T10GP-HF , AP60T10GS-HF , AP60U02GH .

History: NCE3134

 

 
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