IRFIBC30G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFIBC30G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 31(max) nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET IRFIBC30G

IRFIBC30G Datasheet (PDF)

..1. Size:284K international rectifier
irfibc30g.pdf

PD - 95611IRFIBC30GPbF Lead-Free7/29/04Document Number: 91180 www.vishay.com1IRFIBC30GPbFDocument Number: 91180 www.vishay.com2IRFIBC30GPbFDocument Number: 91180 www.vishay.com3IRFIBC30GPbFDocument Number: 91180 www.vishay.com4IRFIBC30GPbFDocument Number: 91180 www.vishay.com5IRFIBC30GPbFDocument Number: 91180 www.vishay.com6IRFIBC30GPbFPeak

..2. Size:923K vishay
irfibc30g sihfibc30g.pdf

IRFIBC30G, SiHFIBC30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.2f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 31 Dynamic dV/dt RatingQgs (nC) 4.6 Low Thermal ResistanceQgd (nC) 17 Lead (Pb)-

..3. Size:928K vishay
irfibc30gpbf.pdf

..4. Size:275K inchange semiconductor
irfibc30g.pdf

iscN-Channel MOSFET Transistor IRFIBC30GFEATURESLow drain-source on-resistance:RDS(ON) =2.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

8.1. Size:904K international rectifier
irfibc20g.pdf

PD - 94856IRFIBC20GPbF Lead-Free11/20/03Document Number: 91178 www.vishay.com1IRFIBC20GPbFDocument Number: 91178 www.vishay.com2IRFIBC20GPbFDocument Number: 91178 www.vishay.com3IRFIBC20GPbFDocument Number: 91178 www.vishay.com4IRFIBC20GPbFDocument Number: 91178 www.vishay.com5IRFIBC20GPbFDocument Number: 91178 www.vishay.com6IRFIBC20GPbFTO-2

8.2. Size:229K international rectifier
irfibc40glc.pdf

8.3. Size:912K international rectifier
irfibc40g.pdf

PD - 94857IRFIBC40GPbF Lead-Free11/20/03Document Number: 91182 www.vishay.com1IRFIBC40GPbFDocument Number: 91182 www.vishay.com2IRFIBC40GPbFDocument Number: 91182 www.vishay.com3IRFIBC40GPbFDocument Number: 91182 www.vishay.com4IRFIBC40GPbFDocument Number: 91182 www.vishay.com5IRFIBC40GPbFDocument Number: 91182 www.vishay.com6IRFIBC40GPbFTO-

8.4. Size:993K international rectifier
irfibc40glcpbf.pdf

PD - 94860IRFIBC40GLCPbF Lead-Free12/03/03Document Number: 91181 www.vishay.com1IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com2IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com3IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com4IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com5IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com6IRFIBC

8.5. Size:1462K vishay
irfibc20g sihfibc20g.pdf

IRFIBC20G, SiHFIBC20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 4.4f = 60 Hz)RoHS*Qg (Max.) (nC) 18COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 8.9 Low Thermal ResistanceConfiguration

8.6. Size:1601K vishay
irfibc40glc sihfibc40glc.pdf

IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati

8.7. Size:1441K vishay
irfibc40g sihfibc40g.pdf

IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing

8.8. Size:275K inchange semiconductor
irfibc20g.pdf

iscN-Channel MOSFET Transistor IRFIBC20GFEATURESLow drain-source on-resistance:RDS(ON) = 4.4 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

8.9. Size:275K inchange semiconductor
irfibc40glc.pdf

iscN-Channel MOSFET Transistor IRFIBC40GLCFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

8.10. Size:275K inchange semiconductor
irfibc40g.pdf

iscN-Channel MOSFET Transistor IRFIBC40GFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Otros transistores... IRFI9634G , IRFI9640G , IRFI9Z24N , IRFI9Z34N , IRFIB5N65A , IRFIB6N60A , IRFIB7N50A , IRFIBC20G , IRF840 , IRFIBC40G , IRFIBC40GLC , IRFIBE20G , IRFIBE30G , IRFIBF20G , IRFIBF30G , IRFIZ14A , IRFIZ24A .

Liste

Recientemente añadidas las descripciónes de los transistores: