AP60T03AH Todos los transistores

 

AP60T03AH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP60T03AH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 57.5 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de AP60T03AH MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP60T03AH datasheet

 ..1. Size:76K  ape
ap60t03ah ap60t03aj.pdf pdf_icon

AP60T03AH

AP60T03AH/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching ID 45A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low

 6.1. Size:77K  ape
ap60t03as ap60t03ap.pdf pdf_icon

AP60T03AH

AP60T03AS/P Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching ID 45A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-

 7.1. Size:186K  ape
ap60t03gh.pdf pdf_icon

AP60T03AH

AP60T03GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45A G RoHS Compliant & Halogen-Free S Description AP60T03 series are from Advanced Power innovated d

 7.2. Size:98K  ape
ap60t03gh j-hf.pdf pdf_icon

AP60T03AH

AP60T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

Otros transistores... AP95T07GS-HF , AP95T10AGR-HF , AP9685GM-HF , AP96LT07GP-HF , AP96T07AGP-HF , AP98T03GP , AP98T06GP-HF , AP60L02GJ , IRF530 , AP60T03AJ , AP60T03AS , AP60T03GJ , AP60T10GP-HF , AP60T10GS-HF , AP60U02GH , AP60U03GH , AP62T02GJ .

History: AP8N8R0MT

 

 

 

 

↑ Back to Top
.