AP60T03GJ Todos los transistores

 

AP60T03GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP60T03GJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 58 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO251

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AP60T03GJ datasheet

 ..1. Size:98K  ape
 ap60t03gh j ap60t03gj ap60t03gh.pdf pdf_icon

AP60T03GJ

AP60T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,

 6.1. Size:186K  ape
 ap60t03gh.pdf pdf_icon

AP60T03GJ

AP60T03GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45A G RoHS Compliant & Halogen-Free S Description AP60T03 series are from Advanced Power innovated d

 6.2. Size:98K  ape
 ap60t03gh j-hf.pdf pdf_icon

AP60T03GJ

AP60T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 6.3. Size:121K  ape
 ap60t03gi.pdf pdf_icon

AP60T03GJ

AP60T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Low Gate Charge RDS(ON) 12m Fast Switching ID 45A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effective

MOSTRAR MÁS

Otros transistores... AP96LT07GP-HF , AP96T07AGP-HF , AP98T03GP , AP98T06GP-HF , AP60L02GJ , AP60T03AH , AP60T03AJ , AP60T03AS , AON7506 , AP60T10GP-HF , AP60T10GS-HF , AP60U02GH , AP60U03GH , AP62T02GJ , AP9410GM-HF , AP9412AGM , AP9412BGM .

 

 

 

 

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