AP9435GP-HF Todos los transistores

 

AP9435GP-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9435GP-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 12.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: TO220

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AP9435GP-HF datasheet

 ..1. Size:95K  ape
ap9435gp-hf.pdf pdf_icon

AP9435GP-HF

AP9435GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID - 15A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 6.1. Size:94K  ape
ap9435gp.pdf pdf_icon

AP9435GP-HF

AP9435GP RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 15A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti

 7.1. Size:169K  ape
ap9435gm-hf.pdf pdf_icon

AP9435GP-HF

AP9435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 50m D Fast Switching ID -5.3A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

 7.2. Size:98K  ape
ap9435gh ap9435gj.pdf pdf_icon

AP9435GP-HF

AP9435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 20A G S Description G D Advanced Power MOSFETs utilized advanced processing techniques to S TO-252(H) achieve the lowest possible on-resistance, extremely efficient and cost-

Otros transistores... AP60U02GH , AP60U03GH , AP62T02GJ , AP9410GM-HF , AP9412AGM , AP9412BGM , AP9435GJ-HF , AP9435GM , 5N60 , AP9450GMT-HF , AP9468GM-HF , AP9474GM-HF , AP9477GM , AP9561GM-HF , AP9563GK-HF , AP9564GM-HF , AP9565AGH-HF .

History: IRF331R | AP15TP1R0Y | TPCT4202 | SSM3J356R | HY1506B | TPCT4201 | NTD4963N

 

 

 

 

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