AP9566GM-HF Todos los transistores

 

AP9566GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9566GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm

Encapsulados: SO8

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AP9566GM-HF datasheet

 ..1. Size:93K  ape
ap9566gm-hf.pdf pdf_icon

AP9566GM-HF

AP9566GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 72m D Fast Switching Characteristic ID -4.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 6.1. Size:100K  ape
ap9566gm.pdf pdf_icon

AP9566GM-HF

AP9566GM RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 72m D Fast Switching Characteristic ID -4.5A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des

 7.1. Size:166K  ape
ap9566gh.pdf pdf_icon

AP9566GM-HF

AP9566GH RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 65m Fast Switching Characteristic ID -13.6A G S Description G Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device design

 9.1. Size:99K  ape
ap9563gh-hf ap9563gj-hf.pdf pdf_icon

AP9566GM-HF

AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r

Otros transistores... AP9468GM-HF , AP9474GM-HF , AP9477GM , AP9561GM-HF , AP9563GK-HF , AP9564GM-HF , AP9565AGH-HF , AP9565AGJ-HF , 2N60 , AP6900GH-HF , AP6900GSM-HF , AP6901GH-HF , AP6902GH-HF , AP6905GH-HF , AP6907GH-HF , AP6923O , AP6950GMT-HF .

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History: AP9477GM

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