AP9566GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9566GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET AP9566GM-HF

AP9566GM-HF Datasheet (PDF)

..1. Size:93K ape
ap9566gm-hf.pdf

AP9566GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 72mD Fast Switching Characteristic ID -4.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

6.1. Size:100K ape
ap9566gm.pdf

AP9566GMRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 72mD Fast Switching Characteristic ID -4.5AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device des

7.1. Size:166K ape
ap9566gh.pdf

AP9566GHRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 65m Fast Switching Characteristic ID -13.6AGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with DSTO-252(H)the best combination of fast switching, ruggedized device design

9.1. Size:99K ape
ap9563gh-hf ap9563gj-hf.pdf

AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r

9.2. Size:235K ape
ap9563gh.pdf

9.3. Size:93K ape
ap9561gp-hf.pdf

AP9561GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des

9.4. Size:93K ape
ap9562gp-hf.pdf

AP9562GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 32m Fast Switching Characteristic ID -27AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des

9.5. Size:237K ape
ap9567gh.pdf

AP9567GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID -22AG RoHS Compliant & Halogen-FreeSDescriptionGAP9567 series are from Advanced Power innovated design and siliconDSprocess technology to achieve

9.6. Size:63K ape
ap9569gh-hf ap9569gj-hf.pdf

AP9569GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -40V Fast Switching Characteristic RDS(ON) 90m RoHS Compliant & Halogen-Free ID -14AGSDescription GDSTO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for

9.7. Size:178K ape
ap9563gm.pdf

AP9563GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID -6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9563 series are from Advanced Power innovated designand silicon process technology

9.8. Size:57K ape
ap9563gm-hf.pdf

AP9563GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID -6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

9.9. Size:95K ape
ap9564gm.pdf

AP9564GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Low On-resistance RDS(ON) 28mD Fast Switching Characteristic ID -7.3AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device d

9.10. Size:89K ape
ap9565gem.pdf

AP9565GEMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Fast Switching Characteristic RDS(ON) 38mD RoHS Compliant ID -6.5AGSSSSO-8DDescriptionGThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized de

9.11. Size:101K ape
ap9567gh-hf.pdf

AP9567GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID -22AG RoHS Compliant & Halogen-FreeSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount a

9.12. Size:57K ape
ap9561agi-hf.pdf

AP9561AGI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -30AG RoHS Compliant & Halogen-FreeSDescriptionAP9561A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

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ap9561gj.pdf

AP9561GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAP9561 series are from Advanced Power innovated design and siliconGDprocess technology to achieve th

9.14. Size:92K ape
ap9560gh-hf.pdf

AP9560GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID -52AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching, TO-

9.15. Size:96K ape
ap9563gk.pdf

AP9563GKRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Lower Gate Charge RDS(ON) 40mS Fast Switching Characteristic ID -6.8ADGSOT-223DDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistance and cost-G

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ap9565agh-hf ap9565agj-hf.pdf

AP9565AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switchi

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ap9561agm-hf.pdf

AP9561AGM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDDD Low On-resistance RDS(ON) 18m Fast Switching Characteristic ID -9.2AGS RoHS Compliant & Halogen-FreeSSO-8 SDDescriptionAP9561A series are from Advanced Power innovated design and siliconprocess technol

9.18. Size:93K ape
ap9561gm-hf.pdf

AP9561GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 18mD Fast Switching Characteristic ID -9.4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

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ap9561gm.pdf

AP9561GMRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 18mD Fast Switching Characteristic ID -9.4AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device des

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ap9565bgh-hf ap9565bgj-hf.pdf

AP9565BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSbest combination of fast switching,

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ap9561gi-hf.pdf

AP9561GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -36AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggediz

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ap9569gm.pdf

AP9569GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDD Fast Switching Characteristic D RDS(ON) 90mD RoHS Compliant ID -4.2AGSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device

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ap9560gs-hf.pdf

AP9560GS-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12.5m Fast Switching Characteristic ID -51AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching, ruggedi

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ap9561gh-hf ap9561gj-hf.pdf

AP9561GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

9.25. Size:57K ape
ap9561agh-hf.pdf

AP9561AGH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -39AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast switching, rugge

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ap9565bgm-hf-pre.pdf

AP9565BGM-HFPreliminaryAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 52mD Fast Switching Characteristic ID -5.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast swi

9.27. Size:95K ape
ap9564gm-hf.pdf

AP9564GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Low On-resistance RDS(ON) 28mD Fast Switching Characteristic ID -7.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

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ap9567gm.pdf

AP9567GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS -40V DDLow On-resistance D RDS(ON) 50m DFast Switching Characteristic ID -6A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best c

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ap9563gj.pdf

9.30. Size:131K ape
ap9565geh ap9565gej.pdf

AP9565GEH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Lower On-resistance RDS(ON) 38mG Fast Switching Characteristic ID -24ASDescriptionGDAdvanced Power MOSFETs from APEC provide theS TO-252(H)designer with the best combination of fast switching,ruggedized device de

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ap9565bgh j-hf.pdf

AP9565BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSbest combination of fast switching

9.32. Size:57K ape
ap9561agj-hf.pdf

AP9561AGJ-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -39AG RoHS Compliant & Halogen-FreeSDescriptionAP9561A series are from Advanced Power innovated design and silicon GDTO-251(J)Sprocess technology t

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ap9560gp-hf.pdf

AP9560GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12.5m Fast Switching Characteristic ID -51AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GTO

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ap9565agh ap9565agj.pdf

AP9565AGH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSdesigner with the best combination of fast switching, TO-252(H)ruggedized device de

9.35. Size:827K cn vbsemi
ap9564gm.pdf

AP9564GMwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1

9.36. Size:827K cn vbsemi
ap9563m.pdf

AP9563Mwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1 8

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