AP85T08GP Todos los transistores

 

AP85T08GP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP85T08GP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 138 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 670 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: TO220

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AP85T08GP datasheet

 ..1. Size:97K  ape
ap85t08gp ap85t08gs.pdf pdf_icon

AP85T08GP

AP85T08GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G D

 6.1. Size:97K  ape
ap85t08gsp-hf.pdf pdf_icon

AP85T08GP

AP85T08GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin

 6.2. Size:204K  ape
ap85t08gs.pdf pdf_icon

AP85T08GP

AP85T08GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75A G Halogen Free & RoHS Compliant Product S Description AP85T08 series are from Advanced Power innovated design and silicon process technology to achieve t

 8.1. Size:98K  ape
ap85t03gh-hf ap85t03gj-hf.pdf pdf_icon

AP85T08GP

AP85T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V D Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suite

Otros transistores... AP6905GH-HF , AP6907GH-HF , AP6923O , AP6950GMT-HF , AP6982GM-HF , AP6985GN2-HF , AP85T03GH-HF , AP85T03GJ-HF , IRF9640 , AP85T10GR-HF , AP90T03GS , AP90T03P-HF , AP90T10GP-HF , AP92LT10GP-HF , AP92T03GH , AP92T03GS , AP93T03AGH-HF .

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History: AP90T03P-HF | AP3P080N

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