AP90T03P-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP90T03P-HF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 3 V

Qgⓘ - Carga de la puerta: 60 nC

trⓘ - Tiempo de subida: 83 nS

Cossⓘ - Capacitancia de salida: 1010 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO220

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AP90T03P-HF datasheet

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AP90T03P-HF

AP90T03P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

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AP90T03P-HF

AP90T03P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

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 ap90t03gh ap90t03gj.pdf pdf_icon

AP90T03P-HF

AP90T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On- resistance BVDSS 30V D Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description G The TO-252 package is widely preferred for commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage ap

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AP90T03P-HF

AP90T03GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide thede signer with the best combination of fast switching, ruggedized device design, low on-resistance

MOSTRAR MÁS

Otros transistores... AP6950GMT-HF, AP6982GM-HF, AP6985GN2-HF, AP85T03GH-HF, AP85T03GJ-HF, AP85T08GP, AP85T10GR-HF, AP90T03GS, SI2302, AP90T10GP-HF, AP92LT10GP-HF, AP92T03GH, AP92T03GS, AP93T03AGH-HF, IRF231, IRF232, IRF233