AP92T03GH Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP92T03GH  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2 V

Qgⓘ - Carga de la puerta: 45 nC

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 930 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO252

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AP92T03GH datasheet

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 ap92t03gh ap92t03gj ap92t03gh j-hf.pdf pdf_icon

AP92T03GH

AP92T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Lower On-resistance RDS(ON) 4m Fast Switching Characteristics ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D S TO-252(H) best combination of fa

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 ap92t03gi-hf.pdf pdf_icon

AP92T03GH

AP92T03GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rugge

 6.2. Size:94K  ape
 ap92t03gsp-hf.pdf pdf_icon

AP92T03GH

AP92T03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Lower On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggediz

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 ap92t03gp.pdf pdf_icon

AP92T03GH

AP92T03GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Lower On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching,ruggedized device design, low D TO-263(

MOSTRAR MÁS

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