AP92T03GS Todos los transistores

 

AP92T03GS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP92T03GS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 63 nS

Cossⓘ - Capacitancia de salida: 930 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO263

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AP92T03GS datasheet

 ..1. Size:231K  ape
 ap92t03gs ap92t03gp.pdf pdf_icon

AP92T03GS

AP92T03GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Lower On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching,ruggedized device design, low D TO-263(

 0.1. Size:94K  ape
 ap92t03gsp-hf.pdf pdf_icon

AP92T03GS

AP92T03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Lower On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggediz

 6.1. Size:93K  ape
 ap92t03gi-hf.pdf pdf_icon

AP92T03GS

AP92T03GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rugge

 6.2. Size:234K  ape
 ap92t03gp.pdf pdf_icon

AP92T03GS

AP92T03GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Lower On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching,ruggedized device design, low D TO-263(

MOSTRAR MÁS

Otros transistores... AP85T03GJ-HF , AP85T08GP , AP85T10GR-HF , AP90T03GS , AP90T03P-HF , AP90T10GP-HF , AP92LT10GP-HF , AP92T03GH , AOD4184A , AP93T03AGH-HF , IRF231 , IRF232 , IRF233 , IRF240SMD , IRF241 , IRF242 , IRF243 .

History: AP15N03GH | SGSP462 | SI2101 | AP3N4R5M

 

 

 

 

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