IRF3000PBF Todos los transistores

 ..1. Size:129K  international rectifier
 irf3000pbf.pdf

PD- 95255 IRF3000PbF SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 300V 0.40W@VGS = 10V 1.6A l Lead-Free Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S Effective COSS to Simplify Design, (See D App. Note AN1001) 4 5 G D l Fully Char

 7.1. Size:119K  international rectifier
 irf3000.pdf

PD- 94423 IRF3000 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 300V 0.40W@VGS = 10V 1.6A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S Effective COSS to Simplify Design, (See D App. Note AN1001) 4 5 G D l Fully Characterized Avalan

 8.1. Size:149K  international rectifier
 irf3007.pdf

PD -94424A AUTOMOTIVE MOSFET IRF3007 Typical Applications HEXFET Power MOSFET 42 Volts Automotive Electrical Systems D Features VDSS = 75V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 0.0126 Fast Switching G Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified ID = 75A S Description Specifically designed for Autom

 8.2. Size:262K  international rectifier
 irf3007pbf.pdf

PD -95618A IRF3007PbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D Features VDSS = 75V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 0.0126 l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 75A S Description This design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve

 8.3. Size:323K  international rectifier
 irf3007spbf irf3007lpbf.pdf

PD - 95494A IRF3007SPbF IRF3007LPbF Typical Applications l Industrial Motor Drive HEXFET Power MOSFET Features D VDSS = 75V l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching RDS(on) = 0.0126 G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 62A S Description This design of HEXFET Power MOSFETs utilizes the lastest processing technique

 8.4. Size:230K  international rectifier
 auirf3004wl.pdf

PD - 97677 AUTOMOTIVE GRADE AUIRF3004WL HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 40V l Ultra Low On-Resistance RDS(on) typ. 1.27m l 50% Lower Lead Resistance max. 1.40m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 386A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free, RoHS

 8.5. Size:615K  international rectifier
 auirf3007.pdf

PD - 96417 AUTOMOTIVE GRADE AUIRF3007 HEXFET Power MOSFET Features D l Advanced Planar Technology V(BR)DSS 75V l Low On-Resistance RDS(on) typ. 10.5m l 175 C Operating Temperature max 12.6m l Fast Switching G ID (Silicon Limited) l Fully Avalanche Rated 80A l Repetitive Avalanche Allowed S ID (Package Limited) 75A up to Tjmax l Lead-Free, RoHS Compliant l Automotive

 8.6. Size:1059K  infineon
 irf300p226.pdf

IRF300P226 MOSFET StrongIRFET V 300V D DSS R DS(on) typ. 16m G max 19m Applications S I 100A D UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits

 8.7. Size:245K  inchange semiconductor
 irf3007.pdf

isc N-Channel MOSFET Transistor IRF3007 IIRF3007 FEATURES Static drain-source on-resistance RDS(on) 12.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.8. Size:256K  inchange semiconductor
 irf3007l.pdf

Isc N-Channel MOSFET Transistor IRF3007L FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75

 8.9. Size:258K  inchange semiconductor
 irf3007s.pdf

Isc N-Channel MOSFET Transistor IRF3007S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt