IRLMS1503PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLMS1503PBF
   Código: B*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 6.4 nC
   trⓘ - Tiempo de subida: 4.4 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT26

Búsqueda de reemplazo de MOSFET IRLMS1503PBF

IRLMS1503PBF Datasheet (PDF)

..1. Size:150K international rectifier
irlms1503pbf.pdf

PD - 95762IRLMS1503PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 30Vl Ultra Low RDS(on)25DDl N-Channel MOSFETl Lead-Free3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper

0.1. Size:192K international rectifier
irlms1503pbf-1.pdf

IRLMS1503PbF-1HEXFET Power MOSFETVDS 30 VA1 6D DRDS(on) max 0.10(@V = 10V)GS25DDRDS(on) max 0.20(@V = 4.5V)GS3 4G SQg (typical) 6.4 nCMicro6ID Top View3.2 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout Micro-6 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturing

5.1. Size:108K international rectifier
irlms1503.pdf

PD - 9.1508CIRLMS1503HEXFET Power MOSFET Generation V Technology Micro6 Package StyleVDSS = 30V Ultra Low Rds(on) N-Channel MOSFETRDS(on) = 0.10DescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andrugged

8.1. Size:108K international rectifier
irlms1902.pdf

PD - 9.1540BIRLMS1902HEXFET Power MOSFET Generation V Technology Micro6 Package StyleVDSS = 20V Ultra Low Rds(on) N-Channel MOSFETRDS(on) = 0.10DescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andrugged

8.2. Size:191K international rectifier
irlms1902trpbf.pdf

PD - 95359IRLMS1902PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 20Vl Ultra Low RDS(on)25DDl N-Channel MOSFETl Lead-Free3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per

8.3. Size:184K international rectifier
irlms1902tr.pdf

PD - 91540CIRLMS1902HEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 20Vl Ultra Low RDS(on)25DDl N-Channel MOSFET3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. T

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