IRLMS2002PBF Datasheet. Equivalente

 ..1. Size:153K  international rectifier
 irlms2002pbf.pdf

PD- 95675 IRLMS2002PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l N-Channel MOSFET D D VDSS = 20V l Surface Mount 2 5 D l Available in Tape & Reel D l 2.5V Rated 3 4 l Lead-Free G S RDS(on) = 0.030 Top View Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per si

 5.1. Size:93K  international rectifier
 irlms2002.pdf

PD- 93758D IRLMS2002 HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l N-Channel MOSFET D D VDSS = 20V l Surface Mount 2 5 D l Available in Tape & Reel D l 2.5V Rated 3 4 G S RDS(on) = 0.030 Top View Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. Th

 5.2. Size:822K  cn vbsemi
 irlms2002tr.pdf

IRLMS2002TR www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/

 9.1. Size:150K  international rectifier
 irlms1503pbf.pdf

PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 30V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 9.2. Size:206K  international rectifier
 irlms5703pbf.pdf

PD - 94896 IRLMS5703PbF HEXFET Power MOSFET l Generation V Technology l Micro6 Package Style A 1 6 D D l Ultra Low RDS(on) VDSS = -30V 2 5 l P-channel MOSFET D D l Lead-Free 3 4 G S RDS(on) = 0.18 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 9.3. Size:108K  international rectifier
 irlms1902.pdf

PD - 9.1540B IRLMS1902 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 20V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

 9.4. Size:195K  international rectifier
 irlms6702.pdf

PD - 91414C IRLMS6702 HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET 3 4 G S RDS(on) = 0.20 Description Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

 9.5. Size:148K  international rectifier
 irlms6802pbf.pdf

PD- 94897 IRLMS6802PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l Lead-Free 3 4 G S RDS(on) = 0.050 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi

 9.6. Size:108K  international rectifier
 irlms1503.pdf

PD - 9.1508C IRLMS1503 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 30V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

 9.7. Size:191K  international rectifier
 irlms1902trpbf.pdf

PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 20V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 9.8. Size:192K  international rectifier
 irlms1503pbf-1.pdf

IRLMS1503PbF-1 HEXFET Power MOSFET VDS 30 V A 1 6 D D RDS(on) max 0.10 (@V = 10V) GS 2 5 D D RDS(on) max 0.20 (@V = 4.5V) GS 3 4 G S Qg (typical) 6.4 nC Micro6 ID Top View 3.2 A (@T = 25 C) A Features Benefits Industry-standard pinout Micro-6 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing

 9.9. Size:204K  international rectifier
 irlms6702pbf-1.pdf

IRLMS6702PbF-1 HEXFET Power MOSFET VDS -20 V A 1 6 D D RDS(on) max 0.200 (@V = -4.5V) GS 2 5 D D RDS(on) max 0.375 (@V = -2.7V) GS 3 4 G S Qg (typical) 5.8 nC Micro6 ID Top View -2.4 A (@T = 25 C) A Features Benefits Industry-standard pinout Micro-6 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufact

 9.10. Size:93K  international rectifier
 irlms4502.pdf

PD- 93759B IRLMS4502 HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -12V l Surface Mount 2 5 D D l Available in Tape & Reel 3 4 G S RDS(on) = 0.042 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit

 9.11. Size:184K  international rectifier
 irlms1902tr.pdf

PD - 91540C IRLMS1902 HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 20V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

 9.12. Size:91K  international rectifier
 irlms6802.pdf

PD- 91848E IRLMS6802 HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel 3 4 G S RDS(on) = 0.050 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit prov

 9.13. Size:163K  international rectifier
 irlms5703.pdf

PD - 91413E IRLMS5703 HEXFET Power MOSFET Generation V Technology A 1 6 Micro6 Package Style D D VDSS = -30V Ultra Low Rds(on) 2 5 D D P-Channel MOSFET 3 4 G S RDS(on) = 0.20 Description T op V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co

 9.14. Size:169K  international rectifier
 irlms6702pbf.pdf

PD - 95224 IRLMS6702PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.20 Description Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 9.15. Size:881K  cn vbsemi
 irlms6802trpbf.pdf

IRLMS6802TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm