IRLMS5703PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLMS5703PBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 2.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 89 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Encapsulados: SOT26
Búsqueda de reemplazo de IRLMS5703PBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRLMS5703PBF datasheet
..1. Size:206K international rectifier
irlms5703pbf.pdf 
PD - 94896 IRLMS5703PbF HEXFET Power MOSFET l Generation V Technology l Micro6 Package Style A 1 6 D D l Ultra Low RDS(on) VDSS = -30V 2 5 l P-channel MOSFET D D l Lead-Free 3 4 G S RDS(on) = 0.18 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
5.1. Size:163K international rectifier
irlms5703.pdf
PD - 91413E IRLMS5703 HEXFET Power MOSFET Generation V Technology A 1 6 Micro6 Package Style D D VDSS = -30V Ultra Low Rds(on) 2 5 D D P-Channel MOSFET 3 4 G S RDS(on) = 0.20 Description T op V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co
9.1. Size:150K international rectifier
irlms1503pbf.pdf
PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 30V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
9.2. Size:108K international rectifier
irlms1902.pdf
PD - 9.1540B IRLMS1902 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 20V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged
9.3. Size:195K international rectifier
irlms6702.pdf
PD - 91414C IRLMS6702 HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET 3 4 G S RDS(on) = 0.20 Description Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T
9.4. Size:148K international rectifier
irlms6802pbf.pdf
PD- 94897 IRLMS6802PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l Lead-Free 3 4 G S RDS(on) = 0.050 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi
9.5. Size:108K international rectifier
irlms1503.pdf
PD - 9.1508C IRLMS1503 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 30V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged
9.6. Size:191K international rectifier
irlms1902trpbf.pdf
PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 20V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
9.7. Size:93K international rectifier
irlms2002.pdf
PD- 93758D IRLMS2002 HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l N-Channel MOSFET D D VDSS = 20V l Surface Mount 2 5 D l Available in Tape & Reel D l 2.5V Rated 3 4 G S RDS(on) = 0.030 Top View Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. Th
9.8. Size:192K international rectifier
irlms1503pbf-1.pdf
IRLMS1503PbF-1 HEXFET Power MOSFET VDS 30 V A 1 6 D D RDS(on) max 0.10 (@V = 10V) GS 2 5 D D RDS(on) max 0.20 (@V = 4.5V) GS 3 4 G S Qg (typical) 6.4 nC Micro6 ID Top View 3.2 A (@T = 25 C) A Features Benefits Industry-standard pinout Micro-6 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing
9.9. Size:204K international rectifier
irlms6702pbf-1.pdf
IRLMS6702PbF-1 HEXFET Power MOSFET VDS -20 V A 1 6 D D RDS(on) max 0.200 (@V = -4.5V) GS 2 5 D D RDS(on) max 0.375 (@V = -2.7V) GS 3 4 G S Qg (typical) 5.8 nC Micro6 ID Top View -2.4 A (@T = 25 C) A Features Benefits Industry-standard pinout Micro-6 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufact
9.10. Size:93K international rectifier
irlms4502.pdf
PD- 93759B IRLMS4502 HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -12V l Surface Mount 2 5 D D l Available in Tape & Reel 3 4 G S RDS(on) = 0.042 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit
9.11. Size:184K international rectifier
irlms1902tr.pdf
PD - 91540C IRLMS1902 HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 20V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T
9.12. Size:91K international rectifier
irlms6802.pdf
PD- 91848E IRLMS6802 HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel 3 4 G S RDS(on) = 0.050 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit prov
9.13. Size:153K international rectifier
irlms2002pbf.pdf
PD- 95675 IRLMS2002PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l N-Channel MOSFET D D VDSS = 20V l Surface Mount 2 5 D l Available in Tape & Reel D l 2.5V Rated 3 4 l Lead-Free G S RDS(on) = 0.030 Top View Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per si
9.14. Size:169K international rectifier
irlms6702pbf.pdf
PD - 95224 IRLMS6702PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.20 Description Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
9.15. Size:881K cn vbsemi
irlms6802trpbf.pdf
IRLMS6802TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm
9.16. Size:822K cn vbsemi
irlms2002tr.pdf
IRLMS2002TR www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/
Otros transistores... IRF460C
, IRF510PBF
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