IRF150C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF150C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 160 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 4 V

Corriente continua de drenaje (Id): 42 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 56 nS

Conductancia de drenaje-sustrato (Cd): 450 pF

Resistencia drenaje-fuente RDS(on): 0.055 Ohm

Empaquetado / Estuche: TO247AB

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IRF150C Datasheet (PDF)

1.1. irf150b irf150c.pdf Size:414K _upd

RoHS IRF150 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 42A, 100Volts DESCRIPTION D The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

4.1. irf1503lpbf irf1503spbf.pdf Size:330K _upd

PD - 95432A IRF1503SPbF IRF1503LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 30V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 3.3mΩ G l 175°C Operating Temperature l Fast Switching ID = 75A l Repetitive Avalanche Allowed up to Tjmax S Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes th

4.2. irf150smd.pdf Size:22K _upd

IRF150SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 100V ID(cont) 19A RDS(on) 0.070 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS

4.3. irf1503l irf1503s.pdf Size:661K _upd

PD - 94494A IRF1503S IRF1503L Typical Applications HEXFET® Power MOSFET ● 14V Automotive Electrical Systems D ● 14V Electronic Power Steering VDSS = 30V Benefits ● Advanced Process Technology RDS(on) = 3.3mΩ ● Ultra Low On-Resistance G ● 175°C Operating Temperature ● Fast Switching ID = 75A S ● Repetitive Avalanche Allowed up to Tjmax Description Specificall

4.4. irf1503pbf.pdf Size:268K _upd

PD-95438A IRF1503PbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 30V Features Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.3mΩ G 175°C Operating Temperature Fast Switching ID = 75A Repetitive Avalanche Allowed up to Tjmax S Description This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to

4.5. irf150-1-2-3.pdf Size:380K _st2

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4.6. irf1503.pdf Size:552K _international_rectifier

PD-94526A AUTOMOTIVE MOSFET IRF1503 Typical Applications HEXFET� Power MOSFET ? 14V Automotive Electrical Systems D ? 14V Electronic Power Steering VDSS = 30V Features ? Advanced Process Technology RDS(on) = 3.3m? ? Ultra Low On-Resistance G ? 175�C Operating Temperature ? Fast Switching ID = 75A S ? Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for

4.7. irf150.pdf Size:150K _international_rectifier

PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED IRF150 HEXFET?TRANSISTORS JANTX2N6764 THRU-HOLE (TO-204AA/AE) JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055? 38A The HEXFET?technology is the key to International Rectifier�s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

Otros transistores... IRLMS6702PBF-1 , IRLMS6702PBF , IRLMS6802PBF , IRF1503L , IRF1503LPBF , IRF1503PBF , IRF1503SPBF , IRF150B , IRFP150N , IRF150SMD , IRF1607PBF , IRF1704 , IRF1902PBF , IRF200B211 , IRLL2705PBF , IRLL3303PBF , IRLL014NPBF .

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