IRFL214PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFL214PBF
   Código: FL214
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.79 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 8.2 nC
   trⓘ - Tiempo de subida: 7.6 nS
   Cossⓘ - Capacitancia de salida: 42 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: SOT223

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IRFL214PBF Datasheet (PDF)

..1. Size:228K international rectifier
irfl214pbf.pdf

PD-95318IRFL214PbFHEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 250V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 2.0 Ease of ParallelingG Simple Drive Requirements Lead-FreeID = 0.79ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastsw

7.1. Size:174K international rectifier
irfl214.pdf

7.2. Size:925K vishay
irfl214 sihfl214.pdf

IRFL214, SiHFL214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250DefinitionRDS(on) ()VGS = 10 V 2.0 Surface MountQg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Parallelin

8.1. Size:182K international rectifier
irfl210.pdf

8.2. Size:803K international rectifier
irfl210pbf.pdf

PD- 95228IRFL210PbF Lead-Free04/28/04Document Number: 91193 www.vishay.com1IRFL210PbFDocument Number: 91193 www.vishay.com2IRFL210PbFDocument Number: 91193 www.vishay.com3IRFL210PbFDocument Number: 91193 www.vishay.com4IRFL210PbFDocument Number: 91193 www.vishay.com5IRFL210PbFDocument Number: 91193 www.vishay.com6IRFL210PbFDocument Number: 91

8.3. Size:170K vishay
irfl210 sihfl210.pdf

IRFL210, SiHFL210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 1.5 Surface MountQg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Parallelin

8.4. Size:1687K cn vbsemi
irfl210trpbf.pdf

IRFL210TRPBFwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Available in tape and reelVDS (V) 200 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.2 Repetitive avalanche ratedQg (Max.) (nC) 8.2 Fast switchingQgs (nC) 1.8 Ease of parallelingAvailableQgd (nC) 4.5 Simple drive requirementsConfiguration SingleDSOT-223DGSD

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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