IRLZ44PBF Todos los transistores

 

IRLZ44PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLZ44PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 66 nC
   trⓘ - Tiempo de subida: 230 nS
   Cossⓘ - Capacitancia de salida: 1200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TO220AB

 Búsqueda de reemplazo de MOSFET IRLZ44PBF

 

IRLZ44PBF Datasheet (PDF)

 ..1. Size:1738K  vishay
irlz44pbf sihlz44.pdf

IRLZ44PBF
IRLZ44PBF

IRLZ44, SiHLZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.028RoHS* RDS(on) Specified at VGS = 4 V and 5 VQg (Max.) (nC) 66 COMPLIANT 175 C Operating TemperatureQgs (nC) 12 Fast SwitchingQgd (nC) 43Configuration Single Ease of Paralleling Si

 ..2. Size:554K  cn vbsemi
irlz44pbf.pdf

IRLZ44PBF
IRLZ44PBF

IRLZ44PBFwww.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

 8.1. Size:381K  international rectifier
irlz44zlpbf irlz44zpbf irlz44zspbf.pdf

IRLZ44PBF
IRLZ44PBF

PD - 95539AIRLZ44ZPbFIRLZ44ZSPbFIRLZ44ZLPbFFeatures Logic Level HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 13.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 51ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achi

 8.2. Size:883K  international rectifier
irlz44.pdf

IRLZ44PBF
IRLZ44PBF

PD - 94886IRLZ44PbF Lead-Free12/11/03Document Number: 91328 www.vishay.com1IRLZ44PbFDocument Number: 91328 www.vishay.com2IRLZ44PbFDocument Number: 91328 www.vishay.com3IRLZ44PbFDocument Number: 91328 www.vishay.com4IRLZ44PbFDocument Number: 91328 www.vishay.com5IRLZ44PbFDocument Number: 91328 www.vishay.com6IRLZ44PbFTO-220AB Package Outline

 8.3. Size:282K  international rectifier
irlz44s.pdf

IRLZ44PBF
IRLZ44PBF

 8.4. Size:102K  international rectifier
irlz44n.pdf

IRLZ44PBF
IRLZ44PBF

PD - 9.1346BIRLZ44NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.022 Fast SwitchingG Fully Avalanche RatedID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan

 8.5. Size:178K  international rectifier
irlz44ns irlz44nl.pdf

IRLZ44PBF
IRLZ44PBF

PD - 91347DIRLZ44NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ44NS) Low-profile through-hole (IRLZ44NL) 175C Operating TemperatureRDS(on) = 0.022 Fast SwitchingG Fully Avalanche RatedID = 47ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

 8.6. Size:340K  international rectifier
irlz44nlpbf irlz44nspbf.pdf

IRLZ44PBF
IRLZ44PBF

IRLZ44NS/LPbFl Logic-Level Gate Drive l Advanced Process TechnologyDl Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL)l 175C Operating Temperature DS(on) l Fast SwitchingGl Fully Avalanche Rated D l Lead-FreeSDescription

 8.7. Size:837K  international rectifier
irlz44spbf.pdf

IRLZ44PBF
IRLZ44PBF

PD- 95393IRLZ44SPbF Lead-Free06/10/04Document Number: 91329 www.vishay.com1IRLZ44SPbFDocument Number: 91329 www.vishay.com2IRLZ44SPbFDocument Number: 91329 www.vishay.com3IRLZ44SPbFDocument Number: 91329 www.vishay.com4IRLZ44SPbFDocument Number: 91329 www.vishay.com5IRLZ44SPbFDocument Number: 91329 www.vishay.com6IRLZ44SPbFDocument Number: 91

 8.8. Size:223K  international rectifier
irlz44npbf.pdf

IRLZ44PBF
IRLZ44PBF

PD - 94831IRLZ44NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.022l Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

 8.9. Size:217K  samsung
irlz44a.pdf

IRLZ44PBF
IRLZ44PBF

IRLZ44AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic-Level Gate DriveRDS(on) = 0.025 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 50 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.02 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Max

 8.10. Size:436K  vishay
irlz44s irlz44spbf sihlz44s.pdf

IRLZ44PBF
IRLZ44PBF

IRLZ44S, SiHLZ44SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate DriveQgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 43 175 C Operating

 8.11. Size:1736K  vishay
irlz44 sihlz44.pdf

IRLZ44PBF
IRLZ44PBF

IRLZ44, SiHLZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.028RoHS* RDS(on) Specified at VGS = 4 V and 5 VQg (Max.) (nC) 66 COMPLIANT 175 C Operating TemperatureQgs (nC) 12 Fast SwitchingQgd (nC) 43Configuration Single Ease of Paralleling Si

 8.12. Size:411K  vishay
irlz44s sihlz44s.pdf

IRLZ44PBF
IRLZ44PBF

IRLZ44S, SiHLZ44SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate DriveQgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 43 175 C Operating

 8.13. Size:215K  infineon
auirlz44z.pdf

IRLZ44PBF
IRLZ44PBF

PD - 97682AUTOMOTIVE GRADEAUIRLZ44ZFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS55V 175C Operating Temperature Fast SwitchingRDS(on) typ.11mG Repetitive Avalanche Allowed up to max. 13.5mTjmaxS Lead-Free, RoHS CompliantID 51A Automotive Qualified *DescriptionDSpecifically

 8.14. Size:340K  infineon
irlz44ns irlz44nl.pdf

IRLZ44PBF
IRLZ44PBF

IRLZ44NS/LPbFl Logic-Level Gate Drive l Advanced Process TechnologyDl Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL)l 175C Operating Temperature DS(on) l Fast SwitchingGl Fully Avalanche Rated D l Lead-FreeSDescription

 8.15. Size:381K  infineon
irlz44zpbf irlz44zspbf irlz44zlpbf.pdf

IRLZ44PBF
IRLZ44PBF

PD - 95539AIRLZ44ZPbFIRLZ44ZSPbFIRLZ44ZLPbFFeatures Logic Level HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 13.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 51ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achi

 8.16. Size:223K  infineon
irlz44npbf.pdf

IRLZ44PBF
IRLZ44PBF

PD - 94831IRLZ44NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.022l Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

 8.17. Size:257K  inchange semiconductor
irlz44zs.pdf

IRLZ44PBF
IRLZ44PBF

Isc N-Channel MOSFET Transistor IRLZ44ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 8.18. Size:245K  inchange semiconductor
irlz44n.pdf

IRLZ44PBF
IRLZ44PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ44N IIRLZ44NFEATURESStatic drain-source on-resistance:RDS(on) 22mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 8.19. Size:251K  inchange semiconductor
irlz44z.pdf

IRLZ44PBF
IRLZ44PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ44ZIIRLZ44ZFEATURESStatic drain-source on-resistance:RDS(on) 13.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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