IRLZ44NPBF Todos los transistores

 ..1. Size:223K  international rectifier
 irlz44npbf.pdf

PD - 94831 IRLZ44NPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.022 l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

 7.1. Size:102K  international rectifier
 irlz44n.pdf

PD - 9.1346B IRLZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.022 Fast Switching G Fully Avalanche Rated ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistan

 7.2. Size:340K  international rectifier
 irlz44ns irlz44nl.pdf

IRLZ44NS/LPbF l Logic-Level Gate Drive l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature DS(on) l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description

 7.3. Size:340K  international rectifier
 irlz44nlpbf irlz44nspbf.pdf

IRLZ44NS/LPbF l Logic-Level Gate Drive l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature DS(on) l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description

 7.4. Size:245K  inchange semiconductor
 irlz44n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLZ44N IIRLZ44N FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R