IRLZ34PBF Todos los transistores

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IRLZ34PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLZ34PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 88 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 10 V

Tensión umbral compuerta-fuente Vgs(th): 2 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 170 nS

Conductancia de drenaje-sustrato (Cd): 660 pF

Resistencia drenaje-fuente RDS(on): 0.05 Ohm

Empaquetado / Estuche: TO220AB

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IRLZ34PBF Datasheet (PDF)

1.1. irlz34pbf.pdf Size:1533K _upd

IRLZ34PBF
IRLZ34PBF

IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Logic-Level Gate Drive RDS(on) (Ω)VGS = 5.0 V 0.050 RoHS* • RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 35 • 175 °C Operating Temperature Qgs (nC) 7.1 • Fast Switching Qgd (nC) 25 • Ease of Paralleling Configuration Single •

4.1. irlz34nspbf irlz34nlpbf.pdf Size:293K _upd

IRLZ34PBF
IRLZ34PBF

PD - 95583 IRLZ34NSPbF IRLZ34NLPbF l Logic-Level Gate Drive HEXFET® Power MOSFET l Advanced Process Technology D l Surface Mount (IRLZ34NS) VDSS = 55V l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature RDS(on) = 0.035Ω l Fast Switching G l Fully Avalanche Rated ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utiliz

4.2. irlz34l irlz34s.pdf Size:367K _upd

IRLZ34PBF
IRLZ34PBF

IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 5 V 0.05 • Surface Mount (IRLZ34S, SiHLZ34S) Qg (Max.) (nC) 35 • Low-Profile Through-Hole (IRLZ34L, SiHLZ34L) Qgs (nC) 7.1 • 175 °C Operating Temperature • Fast Sw

 4.3. irlz34npbf.pdf Size:225K _upd

IRLZ34PBF
IRLZ34PBF

PD - 94830 IRLZ34NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.035Ω l Fully Avalanche Rated G l Lead-Free ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

4.4. irlz34n 1.pdf Size:51K _philips

IRLZ34PBF
IRLZ34PBF

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A low on

 4.5. irlz34n 1.pdf Size:51K _international_rectifier

IRLZ34PBF
IRLZ34PBF

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A low on

4.6. irlz34.pdf Size:891K _international_rectifier

IRLZ34PBF
IRLZ34PBF

PD - 94885 IRLZ34PbF Lead-Free 12/11/03 Document Number: 91327 www.vishay.com 1 IRLZ34PbF Document Number: 91327 www.vishay.com 2 IRLZ34PbF Document Number: 91327 www.vishay.com 3 IRLZ34PbF Document Number: 91327 www.vishay.com 4 IRLZ34PbF Document Number: 91327 www.vishay.com 5 IRLZ34PbF Document Number: 91327 www.vishay.com 6 IRLZ34PbF TO-220AB Package Outline Dime

4.7. irlz34s-l.pdf Size:195K _international_rectifier

IRLZ34PBF
IRLZ34PBF

PD - 9.905A IRLZ34S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRLZ34S) Low-profile through-hole (IRLZ34L) 175C Operating Temperature RDS(on) = 0.050? G Fast Switching Fully Avalanche Rated ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

4.8. irlz34s.pdf Size:357K _international_rectifier

IRLZ34PBF
IRLZ34PBF

PD - 9.905A IRLZ34S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRLZ34S) Low-profile through-hole (IRLZ34L) 175C Operating Temperature RDS(on) = 0.050? G Fast Switching Fully Avalanche Rated ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

4.9. irlz34n.pdf Size:104K _international_rectifier

IRLZ34PBF
IRLZ34PBF

PD - 9.1307B IRLZ34N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.035? Fast Switching G Fully Avalanche Rated ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per

4.10. irlz34ns.pdf Size:180K _international_rectifier

IRLZ34PBF
IRLZ34PBF

PD - 91308A IRLZ34NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ34NS) Low-profile through-hole (IRLZ34NL) 175C Operating Temperature RDS(on) = 0.035? Fast Switching G Fully Avalanche Rated ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

4.11. irlz34a.pdf Size:215K _samsung

IRLZ34PBF
IRLZ34PBF

IRLZ34A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS(on) = 0.046 ? Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.033 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ra

4.12. irlz34 sihlz34.pdf Size:1531K _vishay

IRLZ34PBF
IRLZ34PBF

IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) (?)VGS = 5.0 V 0.050 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 35 175 C Operating Temperature Qgs (nC) 7.1 Fast Switching Qgd (nC) 25 Ease of Paralleling Configuration Single Simple Drive Requi

Otros transistores... IRLZ44ZSPBF , IRLZ44NLPBF , IRLZ44NPBF , IRLZ44NSPBF , IRLZ34L , IRLZ34NLPBF , IRLZ34NPBF , IRLZ34NSPBF , IRFP250 , IRLZ34S , IRLZ34SPBF , IRLZ24L , IRLZ24LPBF , IRLZ24NLPBF , IRLZ24NPBF , IRLZ24NSPBF , IRLZ24PBF .

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