IRLZ34SPBF Todos los transistores

 7.1. Size:357K  international rectifier
 irlz34s irlz34l.pdf

PD - 9.905A IRLZ34S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRLZ34S) Low-profile through-hole (IRLZ34L) 175 C Operating Temperature RDS(on) = 0.050 G Fast Switching Fully Avalanche Rated ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on

 7.2. Size:367K  vishay
 irlz34l irlz34s sihlz34l sihlz34s.pdf

IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.05 Surface Mount (IRLZ34S, SiHLZ34S) Qg (Max.) (nC) 35 Low-Profile Through-Hole (IRLZ34L, SiHLZ34L) Qgs (nC) 7.1 175 C Operating Temperature Fast Sw

 8.1. Size:51K  international rectifier
 irlz34n 1.pdf

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A

 8.2. Size:293K  international rectifier
 irlz34nspbf irlz34nlpbf.pdf

PD - 95583 IRLZ34NSPbF IRLZ34NLPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRLZ34NS) VDSS = 55V l Low-profile through-hole (IRLZ34NL) l 175 C Operating Temperature RDS(on) = 0.035 l Fast Switching G l Fully Avalanche Rated ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utiliz

 8.3. Size:891K  international rectifier
 irlz34.pdf

PD - 94885 IRLZ34PbF Lead-Free 12/11/03 Document Number 91327 www.vishay.com 1 IRLZ34PbF Document Number 91327 www.vishay.com 2 IRLZ34PbF Document Number 91327 www.vishay.com 3 IRLZ34PbF Document Number 91327 www.vishay.com 4 IRLZ34PbF Document Number 91327 www.vishay.com 5 IRLZ34PbF Document Number 91327 www.vishay.com 6 IRLZ34PbF TO-220AB Package Outline

 8.4. Size:230K  international rectifier
 irlz34npbf.pdf

PD - 94830 IRLZ34NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.035 l Fully Avalanche Rated G l Lead-Free ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

 8.5. Size:104K  international rectifier
 irlz34n.pdf

PD - 9.1307B IRLZ34N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.035 Fast Switching G Fully Avalanche Rated ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistan

 8.6. Size:180K  international rectifier
 irlz34ns irlz34nl.pdf

PD - 91308A IRLZ34NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ34NS) Low-profile through-hole (IRLZ34NL) 175 C Operating Temperature RDS(on) = 0.035 Fast Switching G Fully Avalanche Rated ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques

 8.7. Size:51K  philips
 irlz34n 1.pdf

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A

 8.8. Size:215K  samsung
 irlz34a.pdf

IRLZ34A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS(on) = 0.046 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.033 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Ma

 8.9. Size:1531K  vishay
 irlz34 sihlz34.pdf

IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.050 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 35 175 C Operating Temperature Qgs (nC) 7.1 Fast Switching Qgd (nC) 25 Ease of Paralleling Configuration Single

 8.10. Size:1533K  vishay
 irlz34pbf sihlz34.pdf

IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.050 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 35 175 C Operating Temperature Qgs (nC) 7.1 Fast Switching Qgd (nC) 25 Ease of Paralleling Configuration Single

 8.11. Size:1152K  cn vbsemi
 irlz34pbf.pdf

IRLZ34PBF www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dir

 8.12. Size:245K  inchange semiconductor
 irlz34n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLZ34N IIRLZ34N FEATURES Static drain-source on-resistance RDS(on) 35m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R