IRFIZ48N Todos los transistores

 

IRFIZ48N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFIZ48N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 78 nS
   Cossⓘ - Capacitancia de salida: 620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO220F

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IRFIZ48N Datasheet (PDF)

 ..1. Size:109K  international rectifier
irfiz48n.pdf

IRFIZ48N
IRFIZ48N

PD 9.1407IRFIZ48NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.016 Fully Avalanche RatedGID = 36ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve extremelylow on-resis

 ..2. Size:270K  international rectifier
irfiz48npbf.pdf

IRFIZ48N
IRFIZ48N

PD -94835IRFIZ48NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.016l Fully Avalanche RatedGl Lead-FreeID = 40ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

 ..3. Size:500K  infineon
irfiz48npbf.pdf

IRFIZ48N
IRFIZ48N

IRFIZ48NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.016 Fully Avalanche Rated Lead-Free ID 40A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 ..4. Size:201K  inchange semiconductor
irfiz48n.pdf

IRFIZ48N
IRFIZ48N

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIZ48NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

 7.1. Size:1443K  international rectifier
irfiz48g irfiz48gpbf.pdf

IRFIZ48N
IRFIZ48N

IRFIZ48G, SiHFIZ48GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.018f = 60 Hz)RoHS*Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Dynamic dV/dt RatingConfigura

 7.2. Size:93K  international rectifier
irfiz48v.pdf

IRFIZ48N
IRFIZ48N

PD-94072IRFIZ48VHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 12m Fast SwitchingG Fully Avalanche RatedID = 39A Optimized for SMPS ApplicationsSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to

 7.3. Size:214K  international rectifier
irfiz48vpbf.pdf

IRFIZ48N
IRFIZ48N

PD-94834IRFIZ48VPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Isolated PackageVDSS = 60Vl High Voltage Isolation = 2.5KVRMS l Fast SwitchingRDS(on) = 12ml Fully Avalanche RatedGl Optimized for SMPS ApplicationsID = 39Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced p

 7.4. Size:169K  international rectifier
irfiz48g.pdf

IRFIZ48N
IRFIZ48N

 7.5. Size:1442K  vishay
irfiz48g sihfiz48g.pdf

IRFIZ48N
IRFIZ48N

IRFIZ48G, SiHFIZ48GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.018f = 60 Hz)RoHS*Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Dynamic dV/dt RatingConfigura

 7.6. Size:275K  inchange semiconductor
irfiz48g.pdf

IRFIZ48N
IRFIZ48N

iscN-Channel MOSFET Transistor IRFIZ48GFEATURESLow drain-source on-resistance:RDS(ON) 18m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Otros transistores... IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRFIZ44N , IRFIZ46N , 7N65 , IRFL014 , IRFL024N , IRFL1006 , IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 .

 

 
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