IRLZ24L Todos los transistores

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IRLZ24L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLZ24L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 17 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 110 nS

Conductancia de drenaje-sustrato (Cd): 360 pF

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO262

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IRLZ24L Datasheet (PDF)

1.1. irlz24s irlz24l irlz24spbf irlz24lpbf.pdf Size:334K _upd

IRLZ24L
IRLZ24L

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Surface Mount RDS(on) ()VGS = 5 V 0.10 • Available in Tape and Reel • Dynamic dV/dt Rating Qg (Max.) (nC) 18 • Logic-Level Gate Drive Qgs (nC) 4.5 • RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12 •

1.2. irlz24s irlz24l sihlz24s sihlz24l.pdf Size:308K _vishay

IRLZ24L
IRLZ24L

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) (?)VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt Rating Qg (Max.) (nC) 18 Logic-Level Gate Drive Qgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12 175C Operating Tem

 4.1. irlz24nlpbf irlz24nspbf.pdf Size:301K _upd

IRLZ24L
IRLZ24L

PD - 95584 IRLZ24NSPbF IRLZ24NLPbF l Logic-Level Gate Drive HEXFET® Power MOSFET l Advanced Process Technology l Surface Mount (IRLZ24NS) D VDSS = 55V l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature RDS(on) = 0.06Ω l Fast Switching G l Fully Avalanche Rated ID = 18A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize

4.2. irlz24npbf.pdf Size:765K _upd

IRLZ24L
IRLZ24L

PD - 94998 IRLZ24NPbF • Lead-Free www.irf.com 1 2/11/04 IRLZ24NPbF 2 www.irf.com IRLZ24NPbF www.irf.com 3 IRLZ24NPbF 4 www.irf.com IRLZ24NPbF www.irf.com 5 IRLZ24NPbF 6 www.irf.com IRLZ24NPbF www.irf.com 7 IRLZ24NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

 4.3. irlz24pbf irlz24.pdf Size:1747K _upd

IRLZ24L
IRLZ24L

IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Logic-Level Gate Drive RDS(on) ()VGS = 5.0 V 0.10 RoHS* • RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 • 175 °C Operating Temperature Qgs (nC) 4.5 • Fast Switching Qgd (nC) 12 • Ease of Paralleling Configuration Single •

4.4. irlz24ns.pdf Size:191K _international_rectifier

IRLZ24L
IRLZ24L

PD - 91358E IRLZ24NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G Fully Avalanche Rated ID = 18A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

 4.5. irlz24.pdf Size:172K _international_rectifier

IRLZ24L
IRLZ24L

4.6. irlz24pbf.pdf Size:1797K _international_rectifier

IRLZ24L
IRLZ24L

PD- 95972 IRLZ24PbF Lead-Free 12/20/04 Document Number: 91326 www.vishay.com 1 IRLZ24PbF Document Number: 91326 www.vishay.com 2 IRLZ24PbF Document Number: 91326 www.vishay.com 3 IRLZ24PbF Document Number: 91326 www.vishay.com 4 IRLZ24PbF Document Number: 91326 www.vishay.com 5 IRLZ24PbF Document Number: 91326 www.vishay.com 6 IRLZ24PbF Peak Diode Recovery dv/dt Test

4.7. irlz24n.pdf Size:109K _international_rectifier

IRLZ24L
IRLZ24L

PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.06? Fast Switching G Fully Avalanche Rated ID = 18A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-res

4.8. irlz24s.pdf Size:160K _international_rectifier

IRLZ24L
IRLZ24L

Document Number: 90416 www.vishay.com 1475 Document Number: 90416 www.vishay.com 1476 Document Number: 90416 www.vishay.com 1477 Document Number: 90416 www.vishay.com 1478 Document Number: 90416 www.vishay.com 1479 Document Number: 90416 www.vishay.com 1480 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as par

4.9. irlz24a.pdf Size:213K _samsung

IRLZ24L
IRLZ24L

IRLZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive ? RDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.061 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum

4.10. irlz24 sihlz24.pdf Size:1744K _vishay

IRLZ24L
IRLZ24L

IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) (?)VGS = 5.0 V 0.10 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 175 C Operating Temperature Qgs (nC) 4.5 Fast Switching Qgd (nC) 12 Ease of Paralleling Configuration Single Simple Drive Requir

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