IRLZ24S Todos los transistores

 ..1. Size:160K  international rectifier
 irlz24s.pdf

Document Number 90416 www.vishay.com 1475 Document Number 90416 www.vishay.com 1476 Document Number 90416 www.vishay.com 1477 Document Number 90416 www.vishay.com 1478 Document Number 90416 www.vishay.com 1479 Document Number 90416 www.vishay.com 1480 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

 ..2. Size:308K  vishay
 irlz24s irlz24l sihlz24s sihlz24l.pdf

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt Rating Qg (Max.) (nC) 18 Logic-Level Gate Drive Qgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12

 ..3. Size:334K  vishay
 irlz24s irlz24l irlz24spbf irlz24lpbf sihlz24l sihlz24s.pdf

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt Rating Qg (Max.) (nC) 18 Logic-Level Gate Drive Qgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12

 8.1. Size:109K  international rectifier
 irlz24n.pdf

PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G Fully Avalanche Rated ID = 18A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible

 8.2. Size:172K  international rectifier
 irlz24.pdf

 8.3. Size:197K  international rectifier
 irlz24ns irlz24nl.pdf

PD - 91358E IRLZ24NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G Fully Avalanche Rated ID = 18A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques

 8.4. Size:301K  international rectifier
 irlz24nlpbf irlz24nspbf.pdf

PD - 95584 IRLZ24NSPbF IRLZ24NLPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRLZ24NS) D VDSS = 55V l Low-profile through-hole (IRLZ24NL) l 175 C Operating Temperature RDS(on) = 0.06 l Fast Switching G l Fully Avalanche Rated ID = 18A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize

 8.5. Size:1797K  international rectifier
 irlz24pbf.pdf

PD- 95972 IRLZ24PbF Lead-Free 12/20/04 Document Number 91326 www.vishay.com 1 IRLZ24PbF Document Number 91326 www.vishay.com 2 IRLZ24PbF Document Number 91326 www.vishay.com 3 IRLZ24PbF Document Number 91326 www.vishay.com 4 IRLZ24PbF Document Number 91326 www.vishay.com 5 IRLZ24PbF Document Number 91326 www.vishay.com 6 IRLZ24PbF Peak Diode Recovery dv/dt

 8.6. Size:271K  international rectifier
 auirlz24nl auirlz24ns.pdf

AUIRLZ24NS AUTOMOTIVE GRADE AUIRLZ24NL Features HEXFET Power MOSFET D l Advanced Process Technology VDSS 55V l Logic Level Gate Drive l 175 C Operating Temperature RDS(on) max. 0.06 l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID 18A l Lead-Free, RoHS Compliant S l Automotive Qualified * D D Description Specifically designed for Automotive application

 8.7. Size:2577K  international rectifier
 irlz24npbf.pdf

PD - 94998 IRLZ24NPbF Lead-Free www.irf.com 1 2/11/04 IRLZ24NPbF 2 www.irf.com IRLZ24NPbF www.irf.com 3 IRLZ24NPbF 4 www.irf.com IRLZ24NPbF www.irf.com 5 IRLZ24NPbF 6 www.irf.com IRLZ24NPbF www.irf.com 7 IRLZ24NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

 8.8. Size:213K  samsung
 irlz24a.pdf

IRLZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.061 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute

 8.9. Size:1747K  vishay
 irlz24pbf irlz24 sihlz24.pdf

IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.10 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 175 C Operating Temperature Qgs (nC) 4.5 Fast Switching Qgd (nC) 12 Ease of Paralleling Configuration Single

 8.10. Size:1744K  vishay
 irlz24 sihlz24.pdf

IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.10 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 175 C Operating Temperature Qgs (nC) 4.5 Fast Switching Qgd (nC) 12 Ease of Paralleling Configuration Single

 8.11. Size:1130K  cn vbsemi
 irlz24npbf.pdf

IRLZ24NPBF www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

 8.12. Size:246K  inchange semiconductor
 irlz24n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLZ24N IIRLZ24N FEATURES Static drain-source on-resistance RDS(on) 0.06 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM