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IRLZ24SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLZ24SPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

IRLZ24SPBF Datasheet (PDF)

 ..1. Size:334K  vishay
irlz24s irlz24l irlz24spbf irlz24lpbf sihlz24l sihlz24s.pdf pdf_icon

IRLZ24SPBF

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt RatingQg (Max.) (nC) 18 Logic-Level Gate DriveQgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 12

 7.1. Size:160K  international rectifier
irlz24s.pdf pdf_icon

IRLZ24SPBF

Document Number: 90416 www.vishay.com1475Document Number: 90416 www.vishay.com1476Document Number: 90416 www.vishay.com1477Document Number: 90416 www.vishay.com1478Document Number: 90416 www.vishay.com1479Document Number: 90416 www.vishay.com1480Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as

 7.2. Size:308K  vishay
irlz24s irlz24l sihlz24s sihlz24l.pdf pdf_icon

IRLZ24SPBF

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt RatingQg (Max.) (nC) 18 Logic-Level Gate DriveQgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 12

 8.1. Size:109K  international rectifier
irlz24n.pdf pdf_icon

IRLZ24SPBF

PD - 9.1357AIRLZ24NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG Fully Avalanche RatedID = 18ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AM2336N-T1 | SMOS44N80 | CEF05N6

 

 
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