IRLI530GPBF Datasheet. Equivalente

 ..1. Size:1535K  vishay
 irli530g irli530gpbf sihli530g.pdf

IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 Logic-Level Gate Drive Qgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14

 6.1. Size:933K  international rectifier
 irli530g.pdf

PD - 95030 IRLI530GPbF Lead-Free 2/19/04 Document Number 91311 www.vishay.com 1 IRLI530GPbF Document Number 91311 www.vishay.com 2 IRLI530GPbF Document Number 91311 www.vishay.com 3 IRLI530GPbF Document Number 91311 www.vishay.com 4 IRLI530GPbF Document Number 91311 www.vishay.com 5 IRLI530GPbF Document Number 91311 www.vishay.com 6 IRLI530GPbF TO-220 Full-

 6.2. Size:1533K  vishay
 irli530g sihli530g.pdf

IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 Logic-Level Gate Drive Qgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14

 7.1. Size:166K  1
 irli530a irlw530a.pdf

 7.2. Size:144K  international rectifier
 irli530n.pdf

PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.10 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

 7.3. Size:498K  infineon
 irli530npbf.pdf

IRLI530NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.10 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 12A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 7.4. Size:2848K  cn vbsemi
 irli530npbf.pdf

IRLI530NPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.086 f = 60 Hz) RoHS Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 32 Low Thermal R