IRLIZ44NPBF Todos los transistores

 

IRLIZ44NPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLIZ44NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 84 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO220F

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IRLIZ44NPBF datasheet

 ..1. Size:256K  international rectifier
irliz44npbf.pdf pdf_icon

IRLIZ44NPBF

PD - 95456 IRLIZ44NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.022 l Fully Avalanche Rated G l Lead-Free ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

 ..2. Size:499K  infineon
irliz44npbf.pdf pdf_icon

IRLIZ44NPBF

IRLIZ44NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.022 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 30A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 6.1. Size:105K  international rectifier
irliz44n.pdf pdf_icon

IRLIZ44NPBF

PD - 9.1498A IRLIZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.022 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremel

 6.2. Size:200K  inchange semiconductor
irliz44n.pdf pdf_icon

IRLIZ44NPBF

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRLIZ44N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

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