IRFF9232 Todos los transistores

 

IRFF9232 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFF9232

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 50 nS

Conductancia de drenaje-sustrato (Cd): 170 pF

Resistencia drenaje-fuente RDS(on): 0.8 Ohm

Empaquetado / Estuche: TO39

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IRFF9232 Datasheet (PDF)

1.1. irff9230 irff9231 irff9232 irff9233.pdf Size:109K _upd

IRFF9232
IRFF9232



3.1. 2n6851 irff9230.pdf Size:131K _international_rectifier

IRFF9232
IRFF9232

PD - 90551D IRFF9230 JANTX2N6851 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6851 HEXFET?TRANSISTORS JANS2N6851 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9230 -200V 0.80? -4.0A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique

 4.1. irff9210.pdf Size:130K _international_rectifier

IRFF9232
IRFF9232

PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF) IRFF9210 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9210 -200V 3.0? -1.5A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: ver

4.2. 2n6847 irff9220.pdf Size:130K _international_rectifier

IRFF9232
IRFF9232

PD - 90553C IRFF9220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6847 HEXFET?TRANSISTORS JANTXV2N6847 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9220 -200V 1.5? -2.5A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

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