IRF830ASPBF Todos los transistores

 

IRF830ASPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF830ASPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 93 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO263

 Búsqueda de reemplazo de MOSFET IRF830ASPBF

 

IRF830ASPBF Datasheet (PDF)

 ..1. Size:676K  international rectifier
irf830aspbf irf830alpbf.pdf

IRF830ASPBF
IRF830ASPBF

PD- 95139SMPS MOSFETIRF830AS/LPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Lead-FreeBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Vol

 ..2. Size:207K  vishay
irf830alpbf irf830aspbf sihf830al sihf830as.pdf

IRF830ASPBF
IRF830ASPBF

IRF830AS, IRF830AL, SiHF830AS, SiHF830ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 24RequirementQgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterize

 6.1. Size:155K  international rectifier
irf830as.pdf

IRF830ASPBF
IRF830ASPBF

PD- 92006ASMPS MOSFETIRF830AS/LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power SwitchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

 6.2. Size:880K  cn vbsemi
irf830astrl.pdf

IRF830ASPBF
IRF830ASPBF

IRF830ASTRLwww.VBsemi.twN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHSRDS(on) max. at 25 C () VGS = 10 V 0.8643 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)22Qgd

 7.1. Size:108K  international rectifier
irf830a.pdf

IRF830ASPBF
IRF830ASPBF

PD- 91878CSMPS MOSFETIRF830AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40 5.0A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curren

 7.2. Size:168K  international rectifier
irf830apbf.pdf

IRF830ASPBF
IRF830ASPBF

PD- 94820SMPS MOSFETIRF830APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40 5.0A High speed power switching Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Volt

 7.3. Size:155K  international rectifier
irf830al.pdf

IRF830ASPBF
IRF830ASPBF

PD- 92006ASMPS MOSFETIRF830AS/LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power SwitchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

 7.4. Size:911K  samsung
irf830a.pdf

IRF830ASPBF
IRF830ASPBF

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 7.5. Size:1091K  vishay
irf830a sihf830a.pdf

IRF830ASPBF
IRF830ASPBF

IRF830A, SiHF830AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.4RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24 COMPLIANTRuggednessQgs (nC) 6.3 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigurati

 7.6. Size:1093K  vishay
irf830apbf sihf830a.pdf

IRF830ASPBF
IRF830ASPBF

IRF830A, SiHF830AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.4RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24 COMPLIANTRuggednessQgs (nC) 6.3 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigurati

 7.7. Size:234K  inchange semiconductor
irf830a.pdf

IRF830ASPBF
IRF830ASPBF

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF830AFEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch Mode Power SupplyUninterruptable Power SupplyHigh speed power switc

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


IRF830ASPBF
  IRF830ASPBF
  IRF830ASPBF
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top