IRFL4105 Todos los transistores

 ..1. Size:168K  international rectifier
 irfl4105.pdf

PD- 91381A IRFL4105 HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.045 Fast Switching G Fully Avalanche Rated ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

 ..2. Size:158K  international rectifier
 irfl4105pbf.pdf

PD- 95319 IRFL4105PbF HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.045 Fast Switching G Fully Avalanche Rated ID = 3.7A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 ..3. Size:493K  infineon
 irfl4105pbf.pdf

IRFL4105PbF Surface Mount HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V Dynamic dv/dt Rating RDS(on) 0.045 Fast Switching Fully Avalanche Rated ID 3.7A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resi

 ..4. Size:572K  cn evvo
 irfl4105.pdf

IRFL4105 60V N-Channel General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control a

 9.1. Size:662K  international rectifier
 irfl4310pbf.pdf

PD - 95144 IRFL4310PbF HEXFET Power MOSFET D Surface Mount VDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of Paralleling RDS(on) = 0.20 Advanced Process Technology G Ultra Low On-Resistance ID = 1.6A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 9.2. Size:197K  international rectifier
 irfl4315pbf.pdf

PD - 95258A IRFL4315PbF HEXFET Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 150V 185mW@VGS = 10V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 l Fully Characterized Avalanche Voltage and Current l Lead-Free Abs

 9.3. Size:121K  international rectifier
 irfl4315.pdf

PD - 94445 IRFL4315 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters 150V 185m @VGS = 10V 2.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 Fully Characterized Avalanche Voltage an

 9.4. Size:313K  international rectifier
 irfl4310.pdf

PD - 91368B IRFL4310 HEXFET Power MOSFET D VDSS = 100V l Surface Mount l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.20W l Ease of Paralleling G l Advanced Process Technology l Ultra Low On-Resistance ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar

 9.5. Size:2332K  cn vbsemi
 irfl4310tr.pdf

IRFL4310TR www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.019 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.021 ID (A) 7 Configuration Single D SOT-223 G D S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PA