IRF7700 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7700
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua
de drenaje: 8.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 40 nS
Cossⓘ - Capacitancia de salida: 880 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: TSSOP8
Búsqueda de reemplazo de IRF7700 MOSFET
- Selecciónⓘ de transistores por parámetros
IRF7700 datasheet
..1. Size:149K international rectifier
irf7700.pdf 
PD - 93894A IRF7700 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -20V 0.015@VGS = -4.5V -8.6A Very Small SOIC Package 0.024@VGS = -2.5V -7.3A Low Profile (
0.1. Size:241K international rectifier
irf7700gpbf.pdf
PD - 96155A IRF7700GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -20V 0.015@VGS = -4.5V -8.6A l Very Small SOIC Package 0.024@VGS = -2.5V -7.3A l Low Profile (
8.1. Size:141K international rectifier
irf7701.pdf
PD - 93940 IRF7701 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET 0.011@VGS = -4.5V -10A Very Small SOIC Package -12V 0.015@VGS = -2.5V -8.5A Low Profile (
8.2. Size:234K international rectifier
irf7705gpbf.pdf
PD- 96142A IRF7705GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max (mW) ID l Very Small SOIC Package -30V 18 @VGS = -10V -8.0A l Low Profile (
8.3. Size:234K international rectifier
irf7705pbf.pdf
PD-96022A IRF7705PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 18 @VGS = -10V -8.0A l Very Small SOIC Package 30 @VGS = -4.5V -6.0A l Low Profile (
8.4. Size:193K international rectifier
irf7704.pdf
PD- 94160 IRF7704 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET -40V 46@VGS = -10V -4.6A Very Small SOIC Package 74@VGS = -4.5V -3.7A Low Profile (
8.5. Size:146K international rectifier
irf7705.pdf
PD - 94001A IRF7705 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET -30V 18 @VGS = -10V -8.0A Very Small SOIC Package 30 @VGS = -4.5V -6.0A Low Profile (
8.6. Size:138K international rectifier
irf7702.pdf
PD - 93849C PROVISIONAL IRF7702 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID -1.8V Rated 0.014@VGS = -4.5V -8.0A P-Channel MOSFET -12V 0.019@VGS = -2.5V -7.0A Very Small SOIC Package 0.027@VGS = -1.8V -5.8A Low Profile (
8.7. Size:210K international rectifier
irf7703.pdf
PD - 94221 B IRF7703 HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -40V 28@VGS = -10V -6.0A l Very Small SOIC Package 45@VGS = -4.5V -4.8A l Low Profile (
8.8. Size:234K international rectifier
irf7706gpbf.pdf
PD-96143A IRF7706GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package -30V 22m @VGS = -10V -7.0A l Low Profile (
8.9. Size:236K international rectifier
irf7701gpbf.pdf
PD - 96146A IRF7701GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package 0.011@VGS = -4.5V -10A l Low Profile (
8.10. Size:151K international rectifier
irf7707.pdf
PD -93996 IRF7707 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -20V 22m @VGS = -4.5V -7.0A Very Small SOIC Package 33m @VGS = -2.5V -6.0A Low Profile (
8.11. Size:227K international rectifier
irf7702gpbf.pdf
PD- 96147 IRF7702GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l -1.8V Rated 0.014@VGS = -4.5V -8.0A l P-Channel MOSFET -12V 0.019@VGS = -2.5V -7.0A l Very Small SOIC Package 0.027@VGS = -1.8V -5.8A l Low Profile (
8.12. Size:184K international rectifier
irf7702pbf.pdf
PD-96027 IRF7702PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l -1.8V Rated 0.014@VGS = -4.5V -8.0A l P-Channel MOSFET -12V 0.019@VGS = -2.5V -7.0A l Very Small SOIC Package 0.027@VGS = -1.8V -5.8A l Low Profile (
8.13. Size:237K international rectifier
irf7703pbf.pdf
PD-96026A IRF7703PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -40V 28@VGS = -10V -6.0A l Very Small SOIC Package 45@VGS = -4.5V -4.8A l Low Profile (
8.14. Size:237K international rectifier
irf7703gpbf.pdf
PD- 96148A IRF7703GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max (mW) ID l Very Small SOIC Package -40V 28@VGS = -10V -6.0A l Low Profile (
8.15. Size:244K international rectifier
irf7704pbf.pdf
PD- 96025A IRF7704PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -40V 46@VGS = -10V -4.6A l Very Small SOIC Package 74@VGS = -4.5V -3.7A l Low Profile (
8.16. Size:152K international rectifier
irf7706.pdf
PD -94003 IRF7706 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -30V 22m @VGS = -10V -7.0A Very Small SOIC Package 36m @VGS = -4.5V -5.6A Low Profile (
8.17. Size:238K international rectifier
irf7706pbf.pdf
PD-96023A IRF7706PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -30V 22m @VGS = -10V -7.0A l Very Small SOIC Package 36m @VGS = -4.5V -5.6A l Low Profile (
8.18. Size:245K international rectifier
irf7704gpbf.pdf
PD-96149 IRF7704GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -40V 46@VGS = -10V -4.6A l Very Small SOIC Package 74@VGS = -4.5V -3.7A l Low Profile (
Otros transistores... IRF8308MPBF
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.
History: 2SK2672
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