IRFL4310 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFL4310

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 92 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: SOT223

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IRFL4310 datasheet

 ..1. Size:662K  international rectifier
 irfl4310pbf.pdf pdf_icon

IRFL4310

PD - 95144 IRFL4310PbF HEXFET Power MOSFET D Surface Mount VDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of Paralleling RDS(on) = 0.20 Advanced Process Technology G Ultra Low On-Resistance ID = 1.6A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 ..2. Size:313K  international rectifier
 irfl4310.pdf pdf_icon

IRFL4310

PD - 91368B IRFL4310 HEXFET Power MOSFET D VDSS = 100V l Surface Mount l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.20W l Ease of Paralleling G l Advanced Process Technology l Ultra Low On-Resistance ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar

 0.1. Size:2332K  cn vbsemi
 irfl4310tr.pdf pdf_icon

IRFL4310

IRFL4310TR www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.019 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.021 ID (A) 7 Configuration Single D SOT-223 G D S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PA

 7.1. Size:197K  international rectifier
 irfl4315pbf.pdf pdf_icon

IRFL4310

PD - 95258A IRFL4315PbF HEXFET Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 150V 185mW@VGS = 10V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 l Fully Characterized Avalanche Voltage and Current l Lead-Free Abs

MOSTRAR MÁS

Otros transistores... IRFIZ48N, IRFL014, IRFL024N, IRFL1006, IRFL110, IRFL210, IRFL214, IRFL4105, 2SK3878, IRFL9014, IRFL9110, IRFM014A, IRFM044, IRFM054, IRFM110A, IRFM120A, IRFM140