IRFR7440PBF Todos los transistores

 ..1. Size:292K  international rectifier
 irfr7440pbf irfu7440pbf.pdf

StrongIRFET IRFR7440PbF IRFU7440PbF HEXFET Power MOSFET Applications D VDSS 40V l Brushed Motor drive applications l BLDC Motor drive applications RDS(on) typ. 1.9m l PWM Inverterized topologies max. 2.4m l Battery powered circuits G ID (Silicon Limited) 180A l Half-bridge and full-bridge topologies l Electronic ballast applications ID (Package Limited) 90A S l Sy

 6.1. Size:242K  inchange semiconductor
 irfr7440.pdf

isc N-Channel MOSFET Transistor IRFR7440, IIRFR7440 FEATURES Static drain-source on-resistance RDS(on) 2.4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 7.1. Size:272K  international rectifier
 irfr7446pbf.pdf

StrongIRFET IRFR7446PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications l PWM Inverterized topologies D VDSS 40V l Battery powered circuits RDS(on) typ. 3.0m l Half-bridge and full-bridge topologies max. 3.9m l Synchronous rectifier applications G l Resonant mode power supplies ID (Silicon Limited) 120A l OR-ing

 7.2. Size:242K  inchange semiconductor
 irfr7446.pdf

isc N-Channel MOSFET Transistor IRFR7446, IIRFR7446 FEATURES Static drain-source on-resistance RDS(on) 3.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta