IRFR7740PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR7740PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 87 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 370 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm

Encapsulados: TO252

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IRFR7740PBF datasheet

 ..1. Size:576K  international rectifier
 irfr7740pbf irfu7740pbf.pdf pdf_icon

IRFR7740PBF

StrongIRFET IRFR7740PbF IRFU7740PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 7.2m Resonant mode power supplies O

 6.1. Size:242K  inchange semiconductor
 irfr7740.pdf pdf_icon

IRFR7740PBF

isc N-Channel MOSFET Transistor IRFR7740, IIRFR7740 FEATURES Static drain-source on-resistance RDS(on) 7.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 7.1. Size:574K  international rectifier
 irfr7746pbf irfu7746pbf.pdf pdf_icon

IRFR7740PBF

StrongIRFET IRFR7746PbF IRFU7746PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 75V D BLDC Motor drive applications RDS(on) typ. 9.5m Battery powered circuits max 11.2m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 59A S Resona

 7.2. Size:241K  inchange semiconductor
 irfr7746.pdf pdf_icon

IRFR7740PBF

isc N-Channel MOSFET Transistor IRFR7746, IIRFR7746 FEATURES Static drain-source on-resistance RDS(on) 11.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

MOSTRAR MÁS

Otros transistores... IRF7702PBF, IRF7703, IRF7703GPBF, IRF7703PBF, IRFR7440PBF, IRFR7446PBF, IRFR7540PBF, IRFR7546PBF, 20N60, IRFR7746PBF, IRFR812TRPBF, IRFR825TRPBF, IRFR8314PBF, IRFU7440PBF, IRFU7540PBF, IRFU7546PBF, IRFU7740PBF