IRFR812TRPBF Todos los transistores

 ..1. Size:223K  international rectifier
 irfr812trpbf.pdf

 7.1. Size:242K  inchange semiconductor
 irfr812.pdf

isc N-Channel MOSFET Transistor IRFR812, IIRFR812 FEATURES Static drain-source on-resistance RDS(on) 1.85 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Uninterruptible power supplies ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500

 9.1. Size:453K  international rectifier
 auirfr8401 auirfu8401.pdf

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m 175 C Operating Temperature 4.25m G max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID

 9.2. Size:279K  international rectifier
 auirfr8403 auirfu8403.pdf

AUIRFR8403 AUIRFU8403 AUTOMOTIVE GRADE Features HEXFET Power MOSFET l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 3.1m G l Lead-Free, RoHS Compliant ID (Silicon Limited) 127A l Automotive Qualified * Description S ID (Package L

 9.3. Size:543K  international rectifier
 irfr8314pbf.pdf

IRFR8314PbF HEXFET Power MOSFET Application VDSS 30 V D Optimized for UPS/Inverter Applications RDS(on) max Low Voltage Power Tools 2.2 (@ VGS = 10V) m G (@ VGS = 4.5V) 3.1 S Qg (typical) 40 nC Benefits ID (Silicon Limited) 179 Fully Characterized Avalanche Voltage and Current A ID (Package Limited) 90A Lead-Free, RoHS Co

 9.4. Size:211K  international rectifier
 irfr825trpbf.pdf

PD - 96433A IRFR825TRPbF HEXFET Power MOSFET Applications Trr typ. VDSS RDS(on) typ. ID Zero Voltage Switching SMPS Uninterruptible Power Supplies 500V 1.05 92ns 6.0A Motor Control applications D Features and Benefits Fast body diode eliminates the need for external S diodes in ZVS applications. G Lower Gate charge results in simpler drive requirements.

 9.5. Size:292K  international rectifier
 auirfr8405 auirfu8405.pdf

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) typ. 1.65m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 1.98m l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Silicon Limited) 211A Description Specifically designed for A

 9.6. Size:679K  infineon
 auirfr8401 auirfu8401.pdf

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175 C Operating Temperature RDS(on) typ. 3.2m Fast Switching max. 4.25m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 100A Lead-Free, RoHS Compliant ID (Package Limited) 100A

 9.7. Size:686K  infineon
 auirfr8403 auirfu8403.pdf

AUIRFR8403 AUTOMOTIVE GRADE AUIRFU8403 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175 C Operating Temperature RDS(on) typ. 2.4m Fast Switching max. 3.1m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 127A Lead-Free, RoHS Compliant ID (Package Limited) 100A

 9.8. Size:688K  infineon
 auirfr8405 auirfu8405.pdf

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.65m New Ultra Low On-Resistance max. 1.98m 175 C Operating Temperature ID (Silicon Limited) 211A Fast Switching ID (Package Limited) 100A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive

 9.9. Size:242K  inchange semiconductor
 irfr8314.pdf

isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314 FEATURES Static drain-source on-resistance RDS(on) 2.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Optimized for UPS/Inverter Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 9.10. Size:241K  inchange semiconductor
 irfr825tr.pdf

isc N-Channel MOSFET Transistor IRFR825TR,IIRFR825TR FEATURES Static drain-source on-resistance RDS(on) 1.3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Uninterruptible power supplies ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 5