IRFL9014 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFL9014
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 63 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET IRFL9014

IRFL9014 Datasheet (PDF)

..1. Size:256K international rectifier
irfl9014pbf.pdf

PD - 95153IRFL9014PbFHEXFET Power MOSFETl Surface Mountl Available in Tape & Reel DVDSS = -60Vl Dynamic dv/dt Ratingl Repetitive Avalanche Ratedl P-ChannelRDS(on) = 0.50l Fast SwitchingGl Ease of Parallelingl Lead-FreeID = -1.8ASDescriptinThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitchin

..2. Size:222K international rectifier
irfl9014.pdf

PD - 90863AIRFL9014HEXFET Power MOSFET Surface Mount Available in Tape & Reel DVDSS = -60V Dynamic dv/dt Rating Repetitive Avalanche Rated P-ChannelRDS(on) = 0.50 Fast SwitchingG Ease of ParallelingID = -1.8ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, ruggedized device

..3. Size:168K vishay
irfl9014 sihfl9014.pdf

IRFL9014, SiHFL9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and ReelQg (Max.) (nC) 12 Dynamic dV/dt RatingQgs (nC) 3.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 5.1 Fast SwitchingConfiguration Single

0.1. Size:1520K cn vbsemi
irfl9014trpbf.pdf

IRFL9014TRPBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Pa

9.1. Size:171K international rectifier
irfl9110.pdf

9.2. Size:225K international rectifier
irfl9110pbf.pdf

PD - 95320IRFL9110PbFHEXFET Power MOSFET Surface Mount Available in Tape & Reel DVDSS = -100V Dynamic dv/dt Rating Repetitive Avalanche Rated P-ChannelRDS(on) = 1.2 Fast SwitchingG Ease of Paralleling Lead-FreeID = -1.1ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, rugg

9.3. Size:1443K vishay
irfl9110 sihfl9110.pdf

IRFL9110, SiHFL9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100 Definition Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and ReelQg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche RatedQgd (nC) 4.1 P-Channel Fast SwitchingConfiguration Single

9.4. Size:894K cn vbsemi
irfl9110trpbf.pdf

IRFL9110TRPBFwww.VBsemi.twP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Application

Otros transistores... IRFL014 , IRFL024N , IRFL1006 , IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFP250N , IRFL9110 , IRFM014A , IRFM044 , IRFM054 , IRFM110A , IRFM120A , IRFM140 , IRFM150 .

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