IRHQ57214SE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHQ57214SE  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 12 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 53 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: LCC28

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IRHQ57214SE datasheet

 ..1. Size:131K  international rectifier
 irhq57214se.pdf pdf_icon

IRHQ57214SE

PD - 93881B RADIATION HARDENED IRHQ57214SE POWER MOSFET 250V, QUAD N-CHANNEL SURFACE MOUNT (LCC-28) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHQ57214SE 100K Rads (Si) 1.5 1.9A LCC-28 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized

 8.1. Size:128K  international rectifier
 irhq57110.pdf pdf_icon

IRHQ57214SE

PD - 94211 IRHQ57110 100V, Quad N-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) 4# 4 Product Summary Part Number Radiation Level RDS(on) ID IRHQ57110 100K Rads (Si) 0.27 4.6A IRHQ53110 300K Rads (Si) 0.27 4.6A IRHQ54110 600K Rads (Si) 0.27 4.6A IRHQ58110 1000K Rads (Si) 0.29 4.6A LCC-28 International Rectif

 9.1. Size:198K  international rectifier
 irhq567110.pdf pdf_icon

IRHQ57214SE

PD - 94057B IRHQ567110 100V, Combination 2N-2P-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) 4# 4 Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHQ567110 100K Rads (Si) 0.27 4.6A N IRHQ563110 300K Rads (Si) 0.29 4.6A N IRHQ567110 100K Rads (Si) 0.96 -2.8A P IRHQ563110 300K Rads (Si) 0.98 -

 9.2. Size:128K  international rectifier
 irhq597110.pdf pdf_icon

IRHQ57214SE

PD - 94210 IRHQ597110 100V, Quad P-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) 4# 4 Product Summary Part Number Radiation Level RDS(on) ID IRHQ597110 100K Rads (Si) 0.96 -2.8A IRHQ593110 300K Rads (Si) 0.98 -2.8A LCC-28 International Rectifier s RAD-HardTM HEXFET MOSFET Features Technology provides high p

MOSTRAR MÁS

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