IRFM014A Todos los transistores

 

IRFM014A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFM014A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: SOT223
 

 Búsqueda de reemplazo de IRFM014A MOSFET

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Principales características: IRFM014A

 ..1. Size:939K  samsung
irfm014a.pdf pdf_icon

IRFM014A

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V 2 Lower RDS(ON) 0.097 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

 9.1. Size:189K  international rectifier
irfm044.pdf pdf_icon

IRFM014A

PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET

 9.2. Size:190K  international rectifier
irfm054.pdf pdf_icon

IRFM014A

PD - 90709B IRFM054 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM054 0.027 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET

 9.3. Size:271K  international rectifier
irfm064.pdf pdf_icon

IRFM014A

PD-90875C IRFM064 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM064 0.017 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-254AA The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Otros transistores... IRFL1006 , IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRF9540N , IRFM044 , IRFM054 , IRFM110A , IRFM120A , IRFM140 , IRFM150 , IRFM210A , IRFM214A .

 

 
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