IRLR3715PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLR3715PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 71 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 54 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 73 nS
Cossⓘ - Capacitancia de salida: 700 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: TO252
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IRLR3715PBF Datasheet (PDF)
irlu3715pbf irlr3715pbf.pdf

PD - 95555ASMPS MOSFETIRLR3715PbFIRLU3715PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 14m 54A for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGS D-Pak I-Pak
irlr3715.pdf

PD - 94177SMPS MOSFETIRLR3715IRLU3715HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage
irlr3715zcpbf irlu3715zcpbf.pdf

PD - 96053IRLR3715ZCPbFIRLU3715ZCPbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Ultra-Low Gate Impedancel Fully Characterized Avalanche VoltageD-Pa
irlr3715z.pdf

PD - 94650AIRLR3715ZIRLU3715ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl Fully Characteriz
Otros transistores... IRLU3715PBF , IRLU3715ZPBF , IRLU3717PBF , IRLR3705ZPBF , IRLR3714 , IRLR3714PBF , IRLR3714ZPBF , IRLR3715 , AO3400 , IRLR3715ZPBF , IRLR3717PBF , IRLR3802PBF , IRLR3915PBF , IRLR4343 , IRLR4343PBF , IRLU3802PBF , IRLU3915PBF .
History: FDMS86540 | WNM2046B | WMN10N65C4
History: FDMS86540 | WNM2046B | WMN10N65C4



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