IRLR3715ZPBF Todos los transistores

 

IRLR3715ZPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR3715ZPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de IRLR3715ZPBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRLR3715ZPBF datasheet

 ..1. Size:324K  international rectifier
 irlu3715zpbf irlr3715zpbf.pdf pdf_icon

IRLR3715ZPBF

PD - 95088A IRLR3715ZPbF IRLU3715ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits D-Pak I-Pak l Ultra-Low Gate Impedance IRLR3715Z IRLU3715Z l Fully Cha

 5.1. Size:297K  international rectifier
 irlr3715zcpbf irlu3715zcpbf.pdf pdf_icon

IRLR3715ZPBF

PD - 96053 IRLR3715ZCPbF IRLU3715ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage D-Pa

 5.2. Size:204K  international rectifier
 irlr3715z.pdf pdf_icon

IRLR3715ZPBF

PD - 94650A IRLR3715Z IRLU3715Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l Fully Characteriz

 5.3. Size:242K  inchange semiconductor
 irlr3715z.pdf pdf_icon

IRLR3715ZPBF

isc N-Channel MOSFET Transistor IRLR3715Z, IIRLR3715Z FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

MOSTRAR MÁS

Otros transistores... IRLU3715ZPBF , IRLU3717PBF , IRLR3705ZPBF , IRLR3714 , IRLR3714PBF , IRLR3714ZPBF , IRLR3715 , IRLR3715PBF , K3569 , IRLR3717PBF , IRLR3802PBF , IRLR3915PBF , IRLR4343 , IRLR4343PBF , IRLU3802PBF , IRLU3915PBF , IRLU4343 .

 

 

 

 

↑ Back to Top
.