IRLR3715ZPBF Todos los transistores

 

IRLR3715ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR3715ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.55 V
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TO252

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IRLR3715ZPBF Datasheet (PDF)

 ..1. Size:324K  international rectifier
irlu3715zpbf irlr3715zpbf.pdf

IRLR3715ZPBF
IRLR3715ZPBF

PD - 95088AIRLR3715ZPbFIRLU3715ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsD-Pak I-Pakl Ultra-Low Gate ImpedanceIRLR3715Z IRLU3715Zl Fully Cha

 5.1. Size:297K  international rectifier
irlr3715zcpbf irlu3715zcpbf.pdf

IRLR3715ZPBF
IRLR3715ZPBF

PD - 96053IRLR3715ZCPbFIRLU3715ZCPbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Ultra-Low Gate Impedancel Fully Characterized Avalanche VoltageD-Pa

 5.2. Size:204K  international rectifier
irlr3715z.pdf

IRLR3715ZPBF
IRLR3715ZPBF

PD - 94650AIRLR3715ZIRLU3715ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl Fully Characteriz

 5.3. Size:242K  inchange semiconductor
irlr3715z.pdf

IRLR3715ZPBF
IRLR3715ZPBF

isc N-Channel MOSFET Transistor IRLR3715Z, IIRLR3715ZFEATURESStatic drain-source on-resistance:RDS(on)11mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

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