IRLR7807ZPBF Todos los transistores

 

IRLR7807ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR7807ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 43 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0138 Ohm
   Paquete / Cubierta: TO252
 

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IRLR7807ZPBF Datasheet (PDF)

 ..1. Size:268K  international rectifier
 irlr7807zpbf irlu7807zpbf.pdf pdf_icon

IRLR7807ZPBF

PD - 95777AIRLR7807ZPbFIRLU7807ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQg (typ.)Converters for Computer Processor Powerl Lead-Free30V 13.8m 7.0nCBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD-Pak I-PakIRLR7807Z IRLU7807ZAbsolute Maximum Ratings

 5.1. Size:298K  international rectifier
 irlr7807zcpbf irlu7807zcpbf.pdf pdf_icon

IRLR7807ZPBF

PD - 96055IRLR7807ZCPbFIRLU7807ZCPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ)Converters for Computer Processor Powerl Lead-Free30V 13.8m 7.0nCBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD-Pak I-PakIRLR7807ZCPbF IRLU7807ZCPbFAbsolute Maximum Ra

 5.2. Size:159K  international rectifier
 irlr7807z.pdf pdf_icon

IRLR7807ZPBF

PD - 94662IRLR7807ZIRLU7807ZApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qg (typ.)Benefits30V 13.8m 7.0nC Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltageand CurrentD-Pak I-PakIRLR7807Z IRLU7807ZAbsolute Maximum RatingsParameter Max. Units

 5.3. Size:242K  inchange semiconductor
 irlr7807z.pdf pdf_icon

IRLR7807ZPBF

isc N-Channel MOSFET Transistor IRLR7807Z, IIRLR7807ZFEATURESStatic drain-source on-resistance:RDS(on)13.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

MOSTRAR MÁS

Otros transistores... IRLR3915PBF , IRLR4343 , IRLR4343PBF , IRLU3802PBF , IRLU3915PBF , IRLU4343 , IRLU4343PBF , IRLR7807ZCPBF , IRFB3607 , IRLR7811WCPBF , IRLR7811WPBF , IRLR7821CPBF , IRLR7821PBF , IRLR7833PBF , IRLR7843CPBF , IRLR7843PBF , IRLU7807ZPBF .

History: BSP123 | FQD3N60CTMWS

 

 
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