IRLR7811WCPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR7811WCPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 71 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 64 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.8 nS

Cossⓘ - Capacitancia de salida: 420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm

Encapsulados: TO252

  📄📄 Copiar 

 Búsqueda de reemplazo de IRLR7811WCPBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRLR7811WCPBF datasheet

 ..1. Size:207K  international rectifier
irlr7811wcpbf.pdf pdf_icon

IRLR7811WCPBF

PD - 96064 SMPS MOSFET IRLR7811WCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 10.5m 19nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Char

 5.1. Size:185K  international rectifier
irlr7811wpbf.pdf pdf_icon

IRLR7811WCPBF

PD - 95778A SMPS MOSFET IRLR7811WPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 10.5m 19nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Char

 5.2. Size:103K  international rectifier
irlr7811w.pdf pdf_icon

IRLR7811WCPBF

PD - 94492 IRLR7811W SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max Qg High Frequency Synchronous Buck Converters for Computer Processor Power 30V 10.5m 19nC High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche

 8.1. Size:319K  international rectifier
irlr7833pbf irlu7833pbf.pdf pdf_icon

IRLR7811WCPBF

PD - 95092C IRLR7833PbF IRLU7833PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 30V 4.5m 33nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS D-Pak I-Pak l Ultra-Low Gate Impedance IR

Otros transistores... IRLR4343, IRLR4343PBF, IRLU3802PBF, IRLU3915PBF, IRLU4343, IRLU4343PBF, IRLR7807ZCPBF, IRLR7807ZPBF, RFP50N06, IRLR7811WPBF, IRLR7821CPBF, IRLR7821PBF, IRLR7833PBF, IRLR7843CPBF, IRLR7843PBF, IRLU7807ZPBF, IRLU7821CPBF