IRLR7821PBF Todos los transistores

 

IRLR7821PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR7821PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

IRLR7821PBF Datasheet (PDF)

 ..1. Size:320K  international rectifier
 irlr7821pbf irlu7821pbf.pdf pdf_icon

IRLR7821PBF

PD - 95091BIRLR7821PbFIRLU7821PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 10m 10nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSD-PakI-Pakl Ultra-Low Gate Impedance IRL

 6.1. Size:322K  international rectifier
 irlr7821cpbf irlu7821cpbf.pdf pdf_icon

IRLR7821PBF

PD - 96056IRLR7821CPbFIRLU7821CPbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 10m 10nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pakl

 6.2. Size:543K  international rectifier
 irlr7821.pdf pdf_icon

IRLR7821PBF

PD - 94538IRLR7821IRLU7821HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg High Frequency Synchronous BuckConverters for Computer Processor Power30V 10m10nC High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial UseBenefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate ImpedanceD-Pak I-Pak Fully Characterized Av

 6.3. Size:242K  inchange semiconductor
 irlr7821.pdf pdf_icon

IRLR7821PBF

isc N-Channel MOSFET Transistor IRLR7821, IIRLR7821FEATURESStatic drain-source on-resistance:RDS(on)10mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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