IRLR7821PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLR7821PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO252

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IRLR7821PBF Datasheet (PDF)

..1. Size:320K international rectifier
irlr7821pbf irlu7821pbf.pdf

PD - 95091BIRLR7821PbFIRLU7821PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 10m 10nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSD-PakI-Pakl Ultra-Low Gate Impedance IRL

..2. Size:320K infineon
irlr7821pbf irlu7821pbf.pdf

6.1. Size:322K international rectifier
irlr7821cpbf irlu7821cpbf.pdf

PD - 96056IRLR7821CPbFIRLU7821CPbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 10m 10nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pakl

6.2. Size:543K international rectifier
irlr7821.pdf

PD - 94538IRLR7821IRLU7821HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg High Frequency Synchronous BuckConverters for Computer Processor Power30V 10m10nC High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial UseBenefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate ImpedanceD-Pak I-Pak Fully Characterized Av

6.3. Size:242K inchange semiconductor
irlr7821.pdf

isc N-Channel MOSFET Transistor IRLR7821, IIRLR7821FEATURESStatic drain-source on-resistance:RDS(on)10mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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