IRLR8715CPBF Todos los transistores

 

IRLR8715CPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR8715CPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 51 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 V
   Qgⓘ - Carga de la puerta: 6.9 nC
   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0094 Ohm
   Paquete / Cubierta: TO252

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IRLR8715CPBF Datasheet (PDF)

 ..1. Size:277K  international rectifier
irlr8715cpbf.pdf

IRLR8715CPBF
IRLR8715CPBF

PD - 97107AIRLR8715CPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) max Qgl High Frequency Isolated DC-DC25V 9.4m: 6.9nC Converters with Synchronous Rectification for TelecomDBenefitsl Very Low RDS(on) at 4.5V VGSSl Ultra-Low Gate ImpedanceDGl Fully Characterized Avalanche Voltageand

 8.1. Size:293K  international rectifier
irlu8721pbf irlr8721pbf.pdf

IRLR8715CPBF
IRLR8715CPBF

IRLR8721PbFIRLU8721PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 8.4m 8.5nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial Usel Lead-FreeS SDG GBenefitsD-Pakl Very Low RDS(on) at 4.5V VGS I-PakIRLR8721PbFIRLU8721PbF

 8.2. Size:369K  international rectifier
irlu8743pbf irlr8743pbf.pdf

IRLR8715CPBF
IRLR8715CPBF

PD - 96123IRLR8743PbFIRLU8743PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.1m 39nC Converters with Synchronous Rectification for Telecom and Industrial UseDl Lead-FreeBenefitsS SDl Very Low RDS(on) at 4.5V VGSG Gl Ultra-Low Gate Impedance

 8.3. Size:354K  international rectifier
irlu8726pbf irlr8726pbf.pdf

IRLR8715CPBF
IRLR8715CPBF

PD - 97146AIRLR8726PbFIRLU8726PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ.)Converters for Computer Processor Power30V 5.8m @VGS = 10V 15nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationDD for Telecom and Industrial UseBenefitsSl Very Low RDS(on) at 4.5V VGSSDDGl Ultra-Low Gate I

 8.4. Size:259K  international rectifier
irlr8721pbf-1.pdf

IRLR8715CPBF
IRLR8715CPBF

IRLR8721PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.4 m(@V = 10V)GSSGQg (typical) 8.5 nCGID 65 A D-PakS(@T = 25C)CIRLR8721PbF-1Features BenefitsIndustry-standard pinout D-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Indu

 8.5. Size:347K  international rectifier
irlu8729pbf irlr8729pbf.pdf

IRLR8715CPBF
IRLR8715CPBF

PD - 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C

 8.6. Size:232K  international rectifier
irlr8729pbf-1.pdf

IRLR8715CPBF
IRLR8715CPBF

IRLR8729PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.9 m(@V = 10V)GSSQg (typical) 10 nCGGID 58 AD-PakS(@T = 25C)CIRLR8729PbF-1Features BenefitsIndustry-standard pinout D-Pak and I-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Friendlier

 8.7. Size:380K  infineon
irlr8743pbf irlu8743pbf.pdf

IRLR8715CPBF
IRLR8715CPBF

PD - 96123IRLR8743PbFIRLU8743PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.1m 39nC Converters with Synchronous Rectification for Telecom and Industrial UseDl Lead-FreeBenefitsS SDl Very Low RDS(on) at 4.5V VGSG Gl Ultra-Low Gate Impedance

 8.8. Size:354K  infineon
irlr8726pbf irlu8726pbf.pdf

IRLR8715CPBF
IRLR8715CPBF

PD - 97146AIRLR8726PbFIRLU8726PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ.)Converters for Computer Processor Power30V 5.8m @VGS = 10V 15nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationDD for Telecom and Industrial UseBenefitsSl Very Low RDS(on) at 4.5V VGSSDDGl Ultra-Low Gate I

 8.9. Size:347K  infineon
irlr8729pbf irlu8729pbf.pdf

IRLR8715CPBF
IRLR8715CPBF

PD - 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C

 8.10. Size:1635K  cn vbsemi
irlr8729tr.pdf

IRLR8715CPBF
IRLR8715CPBF

IRLR8729TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO

 8.11. Size:243K  inchange semiconductor
irlr8726.pdf

IRLR8715CPBF
IRLR8715CPBF

isc N-Channel MOSFET Transistor IRLR8726, IIRLR8726FEATURESStatic drain-source on-resistance:RDS(on)5.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 8.12. Size:243K  inchange semiconductor
irlr8729.pdf

IRLR8715CPBF
IRLR8715CPBF

isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729FEATURESStatic drain-source on-resistance:RDS(on)8.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFully characterized avalanche voltage and currentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

 8.13. Size:242K  inchange semiconductor
irlr8721.pdf

IRLR8715CPBF
IRLR8715CPBF

isc N-Channel MOSFET Transistor IRLR8721, IIRLR8721FEATURESStatic drain-source on-resistance:RDS(on)8.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 8.14. Size:242K  inchange semiconductor
irlr8743.pdf

IRLR8715CPBF
IRLR8715CPBF

isc N-Channel MOSFET Transistor IRLR8743, IIRLR8743FEATURESStatic drain-source on-resistance:RDS(on)3.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

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