IRLR8721PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLR8721PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 Vtrⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET IRLR8721PBF
IRLR8721PBF Datasheet (PDF)
irlu8721pbf irlr8721pbf.pdf
IRLR8721PbFIRLU8721PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 8.4m 8.5nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial Usel Lead-FreeS SDG GBenefitsD-Pakl Very Low RDS(on) at 4.5V VGS I-PakIRLR8721PbFIRLU8721PbF
irlr8721pbf-1.pdf
IRLR8721PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.4 m(@V = 10V)GSSGQg (typical) 8.5 nCGID 65 A D-PakS(@T = 25C)CIRLR8721PbF-1Features BenefitsIndustry-standard pinout D-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Indu
irlr8721.pdf
isc N-Channel MOSFET Transistor IRLR8721, IIRLR8721FEATURESStatic drain-source on-resistance:RDS(on)8.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
irlu8726pbf irlr8726pbf.pdf
PD - 97146AIRLR8726PbFIRLU8726PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ.)Converters for Computer Processor Power30V 5.8m @VGS = 10V 15nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationDD for Telecom and Industrial UseBenefitsSl Very Low RDS(on) at 4.5V VGSSDDGl Ultra-Low Gate I
irlu8729pbf irlr8729pbf.pdf
PD - 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C
irlr8729pbf-1.pdf
IRLR8729PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.9 m(@V = 10V)GSSQg (typical) 10 nCGGID 58 AD-PakS(@T = 25C)CIRLR8729PbF-1Features BenefitsIndustry-standard pinout D-Pak and I-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Friendlier
irlr8726pbf irlu8726pbf.pdf
PD - 97146AIRLR8726PbFIRLU8726PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ.)Converters for Computer Processor Power30V 5.8m @VGS = 10V 15nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationDD for Telecom and Industrial UseBenefitsSl Very Low RDS(on) at 4.5V VGSSDDGl Ultra-Low Gate I
irlr8729pbf irlu8729pbf.pdf
PD - 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C
irlr8729tr.pdf
IRLR8729TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO
irlr8726.pdf
isc N-Channel MOSFET Transistor IRLR8726, IIRLR8726FEATURESStatic drain-source on-resistance:RDS(on)5.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
irlr8729.pdf
isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729FEATURESStatic drain-source on-resistance:RDS(on)8.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFully characterized avalanche voltage and currentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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