IRLR8721PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLR8721PBF 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 350 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
Encapsulados: TO252
📄📄 Copiar
Búsqueda de reemplazo de IRLR8721PBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRLR8721PBF datasheet
irlu8721pbf irlr8721pbf.pdf
IRLR8721PbF IRLU8721PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 30V 8.4m 8.5nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use l Lead-Free S S D G G Benefits D-Pak l Very Low RDS(on) at 4.5V VGS I-Pak IRLR8721PbF IRLU8721PbF
irlr8721pbf-1.pdf
IRLR8721PbF-1 HEXFET Power MOSFET VDS 30 V D D RDS(on) max 8.4 m (@V = 10V) GS S G Qg (typical) 8.5 nC G ID 65 A D-Pak S (@T = 25 C) C IRLR8721PbF-1 Features Benefits Industry-standard pinout D-Pak Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Indu
irlr8721.pdf
isc N-Channel MOSFET Transistor IRLR8721, IIRLR8721 FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
irlu8726pbf irlr8726pbf.pdf
PD - 97146A IRLR8726PbF IRLU8726PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg (typ.) Converters for Computer Processor Power 30V 5.8m @VGS = 10V 15nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D D for Telecom and Industrial Use Benefits S l Very Low RDS(on) at 4.5V VGS S D D G l Ultra-Low Gate I
Otros transistores... IRLR8103, IRLR8103VPBF, IRLR8113PBF, IRLR8256PBF, IRLR8259PBF, IRLR8503, IRLR8503PBF, IRLR8715CPBF, IRFZ46N, IRLR8721PBF-1, IRLR8726PBF, IRLR8729PBF, IRLR8729PBF-1, IRLR8743PBF, IRLR9343PBF, IRLU9343PBF, IRLU2703PBF
Parámetros del MOSFET. Cómo se afectan entre sí.
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D | MSQ30P15 | MSQ30P07D | MSQ100N03D | MSHM60P14 | MSHM40N085 | MSHM30N46
Popular searches
2sc1166 | jcs9n50fc datasheet | 2n2147 | 2sc870 | 2sa771 | d667 | a965 transistor | hy3210
